2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium power, high performance plastic devices are designed for driver circuits, switching, and amplifier applications. 2N4918 2N4920 Series ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 4) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) 2N4918 C B 40 2N4919 60 2N4920 80 Collector Cutoff Current I mAdc CEO (V = 20 Vdc, I = 0) 2N4918 CE B 0.5 (V = 30 Vdc, I = 0) 2N4919 CE B 0.5 (V = 40 Vdc, I = 0) 2N4920 CE B 0.5 Collector Cutoff Current I mAdc CEX (V = Rated V , V = 1.5 Vdc) CE CEO BE(off) 0.1 (V = Rated V , V = 1.5 Vdc, T = 125 C CE CEO BE(off) C 0.5 Collector Cutoff Current I 0.1 mAdc CBO (V = Rated V , I = 0) CB CB E Emitter Cutoff Current I 1.0 mAdc EBO (V = 5.0 Vdc, I = 0) BE C ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 50 mAdc, V = 1.0 Vdc) 40 C CE (I = 500 mAdc, V = 1.0 Vdc) 30 C CE 150 (I = 1.0 Adc, V = 1.0 Vdc) 10 C CE CollectorEmitter Saturation Voltage (Note 4) V 0.6 Vdc CE(sat) (I = 1.0 Adc, I = 0.1 Adc) C B BaseEmitter Saturation Voltage (Note 4) V 1.3 Vdc BE(sat) (I = 1.0 Adc, I = 0.1 Adc) C B BaseEmitter On Voltage (Note 4) V 1.3 Vdc BE(on) (I = 1.0 Adc, V = 1.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I = 250 mAdc, V = 10 Vdc, f = 1.0 MHz) f 3.0 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 100 kHz) C 100 pF CB E ob SmallSignal Current Gain (I = 250 mAdc, V = 10 Vdc, f = 1.0 kHz) h 25 C CE fe 4. Pulse Test: PW 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping 2N4918 TO225 500 Unit / Bulk 2N4919 TO225 500 Unit / Bulk 2N4920 TO225 500 Unit / Bulk 2N4920G TO225 500 Unit / Bulk (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/D. www.onsemi.com 2