DocumentNumber:MRF8S9100H FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8S9100HR3 DesignedforGSMandGSMEDGEbasestationapplicationswith MRF8S9100HSR3 frequenciesfrom865to960MHz.CanbeusedinClassABandClassCforall typicalcellular basestationmodulationformats. TypicalGSM Performance: V =28Volts,I = 500mA, P = DD DQ out 72Watts CW 920--960MHz,72WCW,28V G ps D GSM,GSMEDGE Frequency (dB) (%) LATERALN--CHANNEL 920MHz 19.3 51.6 RFPOWERMOSFETs 940MHz 19.3 52.9 960MHz 19.1 54.1 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 133Watts CW Output Power (3dB Input Overdrivefrom RatedP ) out Typical P 1dB CompressionPoint 108Watts CW CASE465--06,STYLE1 out NI--780 TypicalGSM EDGE Performance: V =28Volts,I = 700mA, P = DD DQ out MRF8S9100HR3 45Watts Avg. SR1 SR2 G 400kHz 600kHz EVM ps D Frequency (dB) (%) (dBc) (dBc) (%rms) 920MHz 19.1 43 --64.1 --74.5 1.8 CASE465A--06,STYLE1 940MHz 19.1 44 --63.6 --74.6 2.0 NI--780S 960MHz 19.0 45 --62.8 --75.1 2.3 MRF8S9100HSR3 Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RoHSCompliant InTapeandReel. R3Suffix = 250Units per 56mm, 13inchReel. Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,100W CW,28Vdc,I =500mA 0.60 DQ CaseTemperature81C,72W CW,28Vdc,I =500mA 0.65 DQ CaseTemperature82C,45W CW,28Vdc,I =700mA 0.69 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.4 2.2 2.9 Vdc GS(th) (V =10Vdc,I =460Adc) DS D GateQuiescentVoltage V 2.1 2.9 3.6 Vdc GS(Q) (V =28Vdc,I =500mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.17 0.3 Vdc DS(on) (V =10Vdc,I =1.7Adc) GS D (3) FunctionalTests (InFreescaleTestFixture,50ohm system)V =28Vdc,I =500mA,P =72WCW,f=920MHz DD DQ out PowerGain G 18 19.3 23 dB ps DrainEfficiency 50 51.6 % D InputReturnLoss IRL --12.4 --9 dB P 1dB CompressionPoint,CW P1dB 100 W out TypicalBroadbandPerformance(InFreescaleTestFixture,50ohm system)V =28Vdc,I =500mA,P =72WCW DD DQ out G IRL ps D Frequency (dB) (%) (dB) 920MHz 19.3 51.6 --12.4 940MHz 19.3 52.9 --14.3 960MHz 19.1 54.1 --12.2 1. MTTFcalculatoravailableat