BUJ303AX NXP

BUJ303AX NPN power transistor Rev. 6 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A (TO220F)full pac plastic package. 1.2 Features and benefits Fast switching Very high voltage capability Isolated package Very low switching and conduction losses 1.3 Applications DC-to-DC converters Inverters High frequency electronic lighting Motor control systems ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current see Figure 1 see Figure 2 see Figure 4 --5 A C P total power dissipation T 25 C see Figure 3 --32 W tot h V collector-emitter peak V = 0 V - - 1000 V CESM BE voltage TO-220FBUJ303AX NXP Semiconductors NPN power transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base mb C 2 C collector 3E emitter B mb n.c. mounting base isolated E sym123 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUJ303AX TO-220F plastic single-ended package isolated heatsink mounted SOT186A 1 mounting hole 3-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-emitter peak voltage V = 0 V - 1000 V CESM BE V collector-emitter voltage I = 0 A - 500 V CEO B I collector current see Figure 1 see Figure 2 see Figure 4 -5 A C I peak collector current - 10 A CM I base current DC - 2 A B I peak base current - 4 A BM P total power dissipation T 25 C see Figure 3 -32 W tot h T storage temperature -65 150 C stg T junction temperature - 150 C j BUJ303AX All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 6 8 February 2012 2 of 13