BC69PAS NXP

BC69PAS series 1 ) 20 V, 2 A PNP medium power transistors Rev. 1 19 June 2015 Product data sheet 1. Product profile 1.1 General description PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. NPN complement: BC68PAS series 1.2 Features and benefits High collector current capability Three current gain selections I and I C CM Reduced Printed-Circuit Board (PCB) Leadless very small SMD plastic area requirements package with medium power capability Exposed heat sink for excellent thermal Suitable for Automatic Optical and electrical conductivity Inspection (AOI) of solder joint AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 1. Quick reference data T = 25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit V collector-emitter voltage open base - - 20 V CEO I collector current - - 2A C I peak collector current single pulse t 1ms - - 3A CM p 1 h DC current gain V = 1V I = 500 mA 85 - 375 FE CE C 1 h selection -16 V = 1V I = 500 mA 100 - 250 FE CE C 1 h selection -25 V = 1V I = 500 mA 160 - 375 FE CE C 1 Pulse test: t 300 ms 0.02. pBC69PAS series NXP Semiconductors 20 V, 2 A PNP medium power transistors 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1base 2emitter 3 collector P V UDQVSDUHQW WRS YLHZ 7 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BC69PAS DFN2020D-3 plastic thermal enhanced ultra thin small outline SOT1061D package no leads 3 terminals body BC69-16PAS 2 2 0.65 mm. BC69-25PAS 4. Marking Table 4. Marking codes Type number Marking code BC69PAS C1 BC69-16PAS C2 BC69-25PAS C3 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 32 V CBO V collector-emitter voltage open base - 20 V CEO V emitter-base voltage open collector - 5V EBO I collector current - 2A C I peak collector current single pulse - 3A CM t 1ms p I base current - 0.4 A B BC69PAS SER All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 1 19 June 2015 2 of 15