X-On Electronics has gained recognition as a prominent supplier of PSMN9R5-30YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN9R5-30YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN9R5-30YLC,115 Nexperia

PSMN9R5-30YLC,115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN9R5-30YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 44A (Tc) 34W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN9R5-30YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1: AUD 0.9112 ( AUD 1 Inc GST) ea
Line Total: AUD 0.9112 ( AUD 1 Inc GST) 
Availability - 2112
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
54
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 56
Multiples : 1
56 : AUD 0.6166

1455
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1500
Multiples : 1500
1500 : AUD 0.3542
9000 : AUD 0.3446

2112
Ship by Thu. 03 Oct to Mon. 07 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.9112
10 : AUD 0.7165
100 : AUD 0.5219
500 : AUD 0.4352
1000 : AUD 0.3592
1500 : AUD 0.3326
9000 : AUD 0.3238

54
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 56
Multiples : 1
56 : AUD 0.3578

1455
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1500
Multiples : 1500
1500 : AUD 0.3542
9000 : AUD 0.3446

4365
Ship by Fri. 27 Sep to Thu. 03 Oct
MOQ : 1500
Multiples : 1500
1500 : AUD 0.3578

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN9R5-30YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN9R5-30YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN9R5-30YLC N-channel 30 V 9.8 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 1 September 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, and QOSS for resistance high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175C --30 V DS j I drain current T =25C V =10V --44 A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --34 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =15A - 10.3 12.1 m DSon GS D resistance T =25C see Figure 12 j V =10V I =15A -8.3 9.8 m GS D T =25C see Figure 12 jPSMN9R5-30YLC Nexperia N-channel 30 V 9.8 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =15A -1.6 -nC GD GS D V =15V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =15A -5 -nC G(tot) GS D V =15V see Figure 14 DS see Figure 15 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN9R5-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN9R5-30YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 1 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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