PMV65UNEAR Nexperia

PMV65UNEA 20 V, N-channel Trench MOSFET 17 March 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 940 mW ElectroStatic Discharge (ESD) protection > 2KV HBM AEC-Q101 qualified 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage T = 25 C T = 25 C -8 - 8 V GS j amb I drain current V = 4.5 V T = 25 C 1 - - 2.8 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 2.8 A T = 25 C - 63 73 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .Nexperia PMV65UNEA 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV65UNEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV65UNEA EM% 1 % = placeholder for manufacturing site code PMV65UNEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 17 March 2017 2 / 15