PMEG6010ELRX Nexperia

PMEG6010ELR 60 V, 1 A low leakage current Schottky barrier rectifier 25 April 2018 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: I 1 A F(AV) Reverse voltage: V 60 V R Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature T 175 C j Capable for reflow and wave soldering 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward = 0.5 f = 20 kHz T 170 C - - 1 A F(AV) sp current square wave V reverse voltage T = 25 C - - 60 V R j V forward voltage I = 1 A T = 25 C - 605 660 mV F F j I reverse current V = 60 V t 300 s 0.02 - 90 300 nA R R p T = 25 C pulsed jNexperia PMEG6010ELR 60 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 K A 1 2 sym001 2 A anode CFP3 (SOD123W) 1 The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG6010ELR CFP3 plastic, surface mounted package 2 terminals 2.6 mm x 1.7 mm SOD123W x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code PMEG6010ELR K1 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage T = 25 C - 60 V R j I forward current = 1 T = 165 C - 1.41 A F sp I average forward current = 0.5 f = 20 kHz T 170 C square - 1 A F(AV) sp wave = 0.5 f = 20 kHz T 140 C square 1 - 1 A amb wave I non-repetitive peak t = 8 ms square wave T = 25 C - 50 A FSM p j(init) forward current P total power dissipation T 25 C 2 - 680 mW tot amb 3 - 1.15 W 1 - 2.14 W T junction temperature - 175 C j T ambient temperature -55 175 C amb PMEG6010ELR All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 25 April 2018 2 / 14