Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP21N06LT, PHB21N06LT Logic level FET PHD21N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V = 55 V DSS Low on-state resistance Fast switching I = 19 A D Logic level compatible R 75 m (V = 5 V) g DS(ON) GS R 70 m (V = 10 V) DS(ON) GS s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using trench technology. Applications:- d.c. to d.c. converters switched mode power supplies The PHP21N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. 2 The PHB21N06LT is supplied in the SOT404 (D PAK) surface mounting package. The PHD21N06LT is supplied in the SOT428 (DPAK) surface mounting package. 2 PINNING SOT78 (TO220AB) SOT404 (D PAK) SOT428 (DPAK) tab PIN DESCRIPTION tab tab 1 gate 1 2 drain 2 2 3 source 123 13 1 3 tab drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage T = 25 C to 175C - 55 V DSS j V Drain-gate voltage T = 25 C to 175C R = 20 k -55 V DGR j GS V Gate-source voltage - 15 V GS V Pulsed gate-source voltage T 150C - 20 V GSM j I Continuous drain current T = 25 C - 19 A D mb T = 100 C - 13 A mb I Pulsed drain current T = 25 C - 76 A DM mb P Total power dissipation T = 25 C - 56 W D mb T, T Operating junction and - 55 175 C j stg storage temperature 1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages. August 1999 1 Rev 1.500