BSS84AKV,115 Nexperia

BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---50 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =-10 V T =25C ---180mA D GS amb Static characteristics R drain-source on-state V =-10 V I =-100mA -4.5 7.5 DSon GS D resistance T =25C j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain 12 G SOT23 (TO-236AB) S sym146 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS84AK TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code BSS84AK %VS 1 % = placeholder for manufacturing site code BSS84AK All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 23 May 2011 2 of 16