BAS116GWJ Nexperia

BAS116GW Low leakage switching diode 5 April 2018 Product data sheet 1. General description Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits High switching speed: t = 0.8 s rr Low leakage current: I = 3 pA R Repetitive peak reverse voltage V 85 V RRM Low capacitance: C = 2 pF d Small SMD plastic package AEC-Q101 qualified 3. Applications Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse T = 25 C - - 85 V RRM j voltage I forward current t 300 s 0.02 T = 25 C - - 215 mA F p amb V reverse voltage T = 25 C - - 75 V R j V forward voltage I = 150 mA t 300 s 0.02 - - 1.25 V F F p T = 25 C j I reverse current V = 75 V pulsed T = 25 C - 0.003 5 nA R R j t reverse recovery time I = 10 mA I = 10 mA R = 100 - 0.8 3 s rr F R L I = 1 mA T = 25 C R(meas) jNexperia BAS116GW Low leakage switching diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K Cathode K A 1 2 sym001 2 A Anode SOD123 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS116GW SOD123 Plastic surface-mounted package 2 leads SOD123 7. Marking Table 4. Marking codes Type number Marking code BAS116GW GB BAS116GW All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 5 April 2018 2 / 11