MP5410 Low Start-up Voltage Boost Converter with Four SPDT Switches The Future of Analog IC Technology DESCRIPTION FEATURES 1.8V Low Voltage Start-Up The MP5410 is a high efficiency, current mode 1.8V to 5.5V Input Range step-up converter with four single-pole/double- Output Disconnection throw (SPDT) switches designed for low-power bias supply application. The device can boost Integrated Power MOS & Schottky Diode dual-cell NiCd/NiMH or single-cell Li+ battery to Variable Frequency Control 10V output voltage. <1A Shutdown Current Current Mode Control with Internal The MP5410 can start up from an input voltage Compensation as low as 1.8V. It uses a current limited variable More than 80% Efficiency at Light Load frequency control algorithm to optimize Conditions efficiency and minimize external component Tiny External Components size and cost. The internal low resistance N- Inrush Current Limiting and Internal Soft- Channel MOSFET switch can withstand up to Start 10V allowing the MP5410 to produce high Input UVLO output voltage with high efficiency. Over Temperature Protection In addition, the MP5410 can disconnect all 3x3mm QFN16 Package loads from input DC power supply. The integrated schottky diode reduces external APPLICATIONS parts to save critical board space. Dual-cell and Three-cell NiCd/NiMH or The MP5410 features low shutdown current Single-cell Li Battery Consumer Products allowing the part to draw less than 1A off 3D Glass Driver current in shutdown mode. And it includes input Small LCD Displays Bias Supply under voltage and over temperature protection. Digital Still and Video Cameras Handheld Computers and PDAs The MP5410 is available in a small 16-pin QFN 3x3mm package. Cell Phones For MPS green status, please visit MPS website under Quality Assurance. MPS and The Future of Analog IC Technology are Registered Trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION L1 Efficiency C OUT 100 L SW 95 IN R1 OUT C IN 90 Battery FB 85 R2 80 EN MP5410 75 ISET S0 70 S1 R Control ISET 65 S2 GND Signal 60 S3 55 AB C D 50 1.6 2.6 3.6 4.6 5.6 V (V) IN L+ L- R+ R- MP5410 Rev.1.01 www.MonolithicPower.com 1 3/28/2011 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2011 MPS. All Rights Reserved. EFFICIENCY (%)MP5410LOW START-UP VOLTAGE BOOST CONVERTER WITH FOUR SPDT SWITCHES ORDERING INFORMATION Part Number* Package Top Marking Free Air Temperature (T ) A MP5410EQ QFN16 (3x3mm) ABAY -20 C to +85 C * For Tape & Reel, add suffix Z (e.g. MP5410EQZ) For RoHS Compliant Packaging, add suffix LF (e.g. MP5410EQLFZ) PACKAGE REFERENCE TOP VIEW PIN 1 ID OUT SW IN GND 16 15 14 13 L 1 12 ISET EN 2 11 FB S1 3 10 S2 S0 4 9 S3 5 6 7 8 A B C D EXPOSED PAD CONNECT TO GND QFN16 (3x3mm) (4) (1) Thermal Resistance ABSOLUTE MAXIMUM RATINGS JA JC SW, OUT, A, B, C, D..................... -0.5V to +12V QFN16 (3x3mm) .................... 60 ...... 12 ... C/W All other Pins ................................ -0.5V to +6.5V (2) Notes: Continuous Power Dissipation (T = +25C) A 1) Exceeding these ratings may damage the device.......................................................... 2.08W 2) The maximum allowable power dissipation is a function of the maximum junction temperature T(MAX), the junction-to- J Junction Temperature ............................... 150 C ambient thermal resistance , and the ambient temperature JA Lead Temperature .................................... 260 C T . The maximum allowable continuous power dissipation at A any ambient temperature is calculated by P (MAX)=(T (MAX)- D J Storage Temperature ............... -65C to +150 C T )/ . Exceeding the maximum allowable power dissipation A JA (3) will cause excessive die temperature, and the regulator will go Recommended Operating Conditions into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. Supply Voltage V .......................... 1.8V to 5.5V IN 3) The device is not guaranteed to function outside of its Boost Converter Output Voltage ......... V to 10V IN operation conditions. 4) Measured on JESD51-7, 4-layer PCB. Maximum Junction Temp. (T ) ............... +125C J MP5410 Rev.1.01 www.MonolithicPower.com 2 3/28/2011 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2011 MPS. All Rights Reserved.