XL1010-QT-EV1 MACOM

XL1010-QT Low Noise Amplifier Rev. V1 20 - 38 GHz Features Functional Block Diagram/Board Layout 17.0 dB Small Signal Gain N/C N/C N/C VD 3.0 dB Noise Figure Single, Positive Bias Supply 16 15 14 13 3x3mm QFN Package 100% RF Tested RoHS* Compliant and 260C Reflow Compatible GND 1 12 GND Description RF 2 11 RF IN OUT The XL1010-QT is a three stage 20.0-38.0 GHz GND 3 10 GND GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The N/C 4 9 N/C device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply. 5 6 7 8 The devices uses MACOMs GaAs pHEMT device N/C N/C N/C N/C model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. Pin Configuration The device is well suited to multiple receiver applications which require broadband performance Pin No. Function with simple bias requirements and the ease of 1 Ground volume manufacturing with 3x3mm QFN packaging. 2 RF Input 3 Ground 4-9 No Connection 1 10 Ground Ordering Information 11 RF Output Part Number Package 12 Ground XL1010-QT-0G00 bulk quantity 13 Drain Bias XL1010-QT-0G0T tape and reel 14-16 Not Connected 2 17 Paddle XL1010-QT-EV1 evaluation board 2. The exposed pad centered on the package bottom must be 1. Reference Application Note M513 for reel size information. connected to ground. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XL1010-QT Low Noise Amplifier Rev. V1 20 - 38 GHz Electrical Specifications: 20 - 38 GHz (Ambient Temperature T = 25C) Parameter Units Min. Typ. Max. Input Return Loss dB - 12 - Output Return Loss dB - 15 - 3 Small Signal Gain dB 15 17 - Gain Flatness dB - +/-2 - Reverse isolation dB - 45 - Noise Figure dB - 3 - Average Output Power for 1dB Compression dBm - 6 - Drain Bias Voltage VDC 3 4 5 Supply Current mA - 45 60 3. Specified over 24.0 - 36.5 GHz Absolute Maximum Ratings Parameter Absolute Max. Handling Procedures Please observe the following precautions to avoid Supply Voltage +7 VDC damage: Supply Current 70 mA Static Sensitivity Input Power +12 dBm Gallium Arsenide Integrated Circuits are sensitive Storage Temperature -65C to +165C to electrostatic discharge (ESD) and can be 4 Operating Temperature MTTF Graph damaged by static electricity. Proper ESD control techniques should be used when handling these 4 Channel Temperature MTTF Graph class 2 devices. 4. Channel temperature directly affects a device s MTTF. It is recommended to keep channel temperature as low as possible to maximize lifetime. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: