Power Module 1200V 75A IGBT Module RoHS MG1275S-BA1MM Features Ultra Low Loss P ositive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.2 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.5 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 150 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 20 V GES T =25C 105 A C I DC Collector Current C T =80C 75 A C T =25C, t =1ms 210 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 150 C p P Power Dissipation Per IGBT 630 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 1200 V RRM T =25C 90 A C I Average Forward Current F(AV) T =80C 60 A C I RMS Forward Current 90 A F(RMS) T =45C, t=10ms, Sine 430 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 450 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG1275S-BA1MM 2015 Littelfuse, Inc 1 56 Specifications are subject to change without notice. Revised:05/19/15Power Module 1200V 75A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =3mA 5.0 6.2 7.0 V GE(th) CE GE C I =75A, V =15V, T =25C 1.8 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =75A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 0.2 0.5 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 2 mA CE GE J I Gate Leakage Current V =0V,V =20V -100 100 nA GES CE GE Q Gate Charge V =600V, I =75A , V =15V 780 nC ge CC C GE C Input Capacitance 5.52 ies C Output Capacitance 0.4 V =25V, V =0V, f =1MHz nF oes CE GE C Reverse Transfer Capacitance 0.26 res T =25C 150 ns J t Turn - on Delay Time d(on) T =125C 160 ns J T =25C 65 ns J V =600V t Rise Time CC r T =125C 65 ns J I =75A T =25C 440 ns C J t Turn - off Delay Time d(off) T =125C 500 ns J R =15 G T =25C 55 ns J t Fall Time f T =125C 70 ns V =15V J GE T =25C 7.45 mJ J E Turn - on Energy Inductive Load on T =125C 10.3 mJ J T =25C 4.9 mJ J E Turn - off Energy off T =125C 7.8 mJ J Diode I =75A , V =0V, T =25C 2.0 2.48 V F GE J V Forward Voltage F I =75A , V =0V, T =125C 1.7 2.2 V F GE J t Reverse Recovery Time 200 ns rr I =75A , V =800V F R I Max. Reverse Recovery Current di /dt=-1000A/s 70 A RRM F T =125C J Q Reverse Recovery Charge 8.2 C rr MG1275S-BA1MM 1 2015 Littelfuse, Inc 57 Specifications are subject to change without notice. Revised:05/19/15