Power Module 1200V 100A IGBT Module RoHS MG12105S-BA1MM Features Ultra Low Loss P ositive Temperature Coefficient High Ruggedness W ith Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.18 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.45 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 150 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 20 V GES T =25C 150 A C I DC Collector Current C T =80C 105 A C T =25C, t =1ms 300 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 210 C p P Power Dissipation Per IGBT 690 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 1200 V RRM T =25C 125 A C I Average Forward Current F(AV) T =80C 85 A C I RMS Forward Current 122 A F(RMS) T =45C, t=10ms, Sine 930 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 980 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12105S-BA1MM 2015 Littelfuse, Inc 1 82 Specifications are subject to change without notice. Revised:05/19/15Power Module 1200V 100A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =4mA 5.0 6.2 7.0 V GE(th) CE GE C I =100A, V =15V, T =25C 1.8 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =100A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 0.2 0.5 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 3 mA CE GE J I Gate Leakage Current V =0V,V =20V -200 200 nA GES CE GE Q Gate Charge V =600V, I =100A , V =15V 1050 nC ge CC C GE C Input Capacitance 7.43 ies C Output Capacitance V =25V, V =0V, f =1MHz 0.52 nF oes CE GE C Reverse Transfer Capacitance 0.34 res T =25C 125 ns J t Turn - on Delay Time d(on) T =125C 135 ns J T =25C 60 ns J t Rise Time V =600V CC r T =125C 60 ns J I =100A T =25C 420 ns C J t Turn - off Delay Time d(off) T =125C 490 ns J R =10 G T =25C 60 ns J t Fall Time f T =125C 75 ns V =15V J GE T =25C 8.6 mJ J E Turn - on Energy Inductive Load on T =125C 12.4 mJ J T =25C 6.8 mJ J E Turn - off Energy off T =125C 10.8 mJ J Diode I =100A , V =0V, T =25C 2.0 2.44 V F GE J V Forward Voltage F I =100A , V =0V, T =125C 1.7 2.20 V F GE J t Reverse Recovery Time 220 ns rr I =100A , V =800V F R I Max. Reverse Recovery Current di /dt=-1000A/s 85 A RRM F T =125C Q Reverse Recovery Charge J 9.8 C rr MG12105S-BA1MM 2015 Littelfuse, Inc 2 83 Specifications are subject to change without notice. Revised:05/19/15