TM IXFH26N60P V = 600 V PolarHV DSS I =26 A IXFT26N60P D25 Power MOSFET IXFV26N60P R 270 m DS(on) N-Channel Enhancement Mode IXFV26N60PS t 200 ns rr Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25C to 150C 600 V DSS J V T = 25C to 150C R = 1 M 600 V DGR J GS V Continuous 30 V GSS G V Transient 40 V D GSM S I T = 25C26A D25 C TO-268 (IXFT) I T = 25C, pulse width limited by T 65 A DM C JM I T = 25C13A AR C E T = 25C40mJ AR C G E T = 25C 1.2 J AS C S D (TAB) dv/dt I I , di/dt 100 A/s, V V 10 V/ns S DM DD DSS PLUS220 (IXFV) T 150C, R = 5 J G P T = 25C 460 W D C T -55 ... +150 C J T 150 C G JM D D (TAB) T -55 ... +150 C S stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L PLUS220SMD (IXFV...S) T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-3P&TO-247) 1.13/10 Nm/lb.in. d F Mounting force (PLUS220) 11..65/2.5..15 N/lb C Weight TO-247 6.0 g G TO-268 5.0 g S D (TAB) PLUS220 & PLUS220SMD 4.0 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. Features J z Fast Recovery diode BV V = 0 V, I = 250 A 600 V DSS GS D z Unclamped Inductive Switching (UIS) V V = V , I = 4 mA 2.5 5.0 V rated GS(th) DS GS D z International standard packages I V = 30 V, V = 0 V 100 nA z GSS GS DS Low package inductance - easy to drive and to protect I V = V 25 A DSS DS DSS V = 0 V T = 125C 250 A GS J Advantages z Easy to mount R V = 10 V, I = 0.5 I 270 m DS(on) GS D D25 z Space savings Pulse test, t 300 s, duty cycle d 2 % z High power density DS99435E(12/06) 2006 IXYS All rights reservedIXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 16 26 S fs DS D D25 C 4150 pF iss C V = 0 V, V = 25 V, f = 1 MHz 400 pF oss GS DS C 27 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 I 27 ns r GS DS D25 t R = 5 (External) 75 ns d(off) G t 21 ns f Q 72 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 24 nC gd R 0.27 C/W thJC R (PLUS220 & TO-247) 0.21 C/W thCs Source-Drain Diode Characteristic Values (T = 25C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 26 A S GS I Repetitive 78 A SM V I = I , V = 0 V, pulse test 1.5 V SD F S GS t I = 25A, -di/dt = 100 A/s 150 200 ns rr F I V = 100V V = 0 V 7 A RM R GS Q 0.7 C RM Characteristic Curves Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics 25C 25C 60 V 10V V = 10V GS = 24 GS 54 7V 7V 48 20 42 6V 16 36 30 6V 12 24 8 18 12 4 5V 6 5V 0 0 0123 45 67 0 3 6 9 12 15 18 21 24 27 30 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 I - Amperes D I - Amperes D