DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode V = 1000 V DSS Low Q and R g g High dv/dt I = 8 A D25 Nanosecond Switching R = 1.5 DS(on) Ideal for Class C, D, & E Applications P = 590 W DC Symbol Test Conditions Maximum Ratings T = 25C to 150C J V 1000 V DSS T = 25C to 150C R = 1 M V J GS 1000 V DGR Continuous V 20 V GS Transient V 30 V GSM T = 25C c I 8 A D25 T = 25C, pulse width limited by T c JM I 48 A DM T = 25C I c 6 A AR T = 25C c E 20 mJ AR DRAIN I I , di/dt 100A/s, V V , S DM DD DSS 5 V/ns GATE T 150C, R = 0.2 j G dv/dt I = 0 S >200 V/ns P 590 W DC T = 25C SG1 SG2 SD1 SD2 c P 300 W DHS Derate 2.0W/C above 25C Features T = 25C c P 3.0 W DAMB Isolated Substrate R 0.25 C/W thJC high isolation voltage (>2500V) excellent thermal transfer R 0.50 C/W thJHS Increased temperature and power cycling capability Symbol Test Conditions Characteristic Values IXYS advanced low Q process g Low gate charge and capacitances T = 25C unless otherwise specified J min. typ. max. easier to drive V = 0 V, I = 3 mA GS D V 1000 V DSS faster switching Low R DS(on) V = V , I = 250 A DS GS D V 3.5 5.0 V GS(th) Very low insertion inductance (<2nH) V = 20 V , V = 0 GS DC DS I 100 nA GSS No beryllium oxide (BeO) or other hazardous materials V = 0.8 V T = 25C DS DSS J I 50 A DSS V = 0 T = 125C GS J 1 mA Advantages Optimized for RF and high speed V = 15 V, I = 0.5I GS D D25 R 1.5 DS(on) switching at frequencies to 100MHz Pulse test, t 300S, duty cycle d 2% Easy to mountno insulators needed V = 20 V, I = 0.5I , pulse test DS D D25 g 2.5 4.3 7 S fs High power density R 0.50 C/W thJHS T -55 +175 C J T 175 C JM T -55 +175 C stg 1.6mm (0.063 in) from case for 10 s T 300 C L Weight 2 g DE275-102N06A RF Power MOSFET Symbol Test Conditions Characteristic Values (T = 25C unless otherwise specified) min. typ. max. J R 0.3 G C 1650 pF iss V = 0 V, V = 0.8 V , GS DS DSS(max) C 80 pF oss f = 1 MHz C 18 pF rss Back Metal to any Pin C 21 pF stray T 3 ns d(on) V = 15 V, V = 0.8 V T GS DS DSS 2 ns on I = 0.5 I D DM R = 0.2 (External) T G 4 ns d(off) T 5 ns off Q 46 nC g(on) V = 10 V, V = 0.5 V GS DS DSS Q 8 nC gs I = 0.5 I IG = 3mA D D25 Q 25 nC gd Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions min. typ. max. V = 0 V GS I 6 A S Repetitive pulse width limited by T JM I 48 A SM I = I , V = 0 V, F S GS V 1.5 V SD Pulse test, t 300 s, duty cycle 2% T 200 ns rr I = I , -di/dt = 100A/s, Q F S 0.6 RM C V = 100V R I 4 A RM CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub- lished in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at