GE2X8MPS06D TM 650V 16A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 650 V RRM IF (T = 156C) = 16 A * C Q = 40 nC * C Features Package Revolu tionary Low Built-In Voltage (V ) BI Case Gen5 Thin Chip Technology for Low V F Superior Figure of Merit Q * V C F Enhanced Surge Current Robustness RoHS Low Thermal Resistance Zero Reverse Recovery 100% Avalanche (UIL) Tested Excellent dV/dt Ruggedness TO-247-3 REACH A K A Advantages Applicaoti ns Low Conduc tion Losses for All Load Conditi ons Switched Mode Power Supply (SMPS) Op timal Price Performance Solar Inverter Increased System Power Density Server and Telecom Power Supply High System Reliability Ba ttery Charger Reduced Cooling Requirements Uninterruptible Power Supply (UPS) Temperature Independent Fast Switching Motor Control Easy to Parallel without Thermal Runaway Power Factor Correction (PFC) Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 650 V RRM TC = 100C, D = 1 17 / 34 Continuous Forward Current (Per Leg / Per Device) IF TC = 135C, D = 1 12 / 24 A Fig. 4 T = 156C, D = 1 8 / 16 C T = 25C, t = 10 ms 56 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave (Per Leg) T = 150C, t = 10 ms 44 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 33 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 23 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 280 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 15 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 3.3 mH, IAS = 8 A 105 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 520 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 107 / 214 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE2X8MPS06D/GE2X8MPS06D.pdf Page 1 of 7GE2X8MPS06D TM 650V 16A SiC Schoktt y MPS Diode Electrical Characteriscti s (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 8 A, T = 25C 1.25 1.4 F j Diode Forward Voltage V V Fig. 1 F I = 8 A, T = 175C 1.75 F j V = 650 V, T = 25C 1 10 R j Reverse Current I A Fig. 2 R V = 650 V, T = 175C 155 R j VR = 200 V 14 Total Capacitive Charge Q nC Fig. 7 C VR = 400 V 20 IF IF,MAX dI /dt = 200 A/s F V = 200 V R Switching Time tS < 10 ns V = 400 V R VR = 1 V, f = 1MHz 373 Total Capacitance C pF Fig. 6 VR = 400 V, f = 1MHz 26 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 1.41 C/W Fig. 9 thJC (Per Leg) Weight WT 6.1 g Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GE2X8MPS06D/GE2X8MPS06D.pdf Page 2 of 7