150K(R)20A thru 150K(R)100A
V = 200 V - 1000 V
RRM
Silicon Standard
I =150 A
F
Recovery Diode
Features
High Surge Capability DO-8 Package
Types up to 1000 V V
RRM
StandardOrientation
2
2
2
1
2
1
1
1
Maximum ratings, at T = 25 C, unless otherwise specified devices have leads reversed)
j
Parameter Symbol Conditions 150K(R)20A 150K(R)40A 150K(R)60A 150K(R)80A 150K(R)100A Unit
Repppetitive peak reverse voltagge V 200 400 600 800 1000 V
RRM
V 800 1000
DC blocking voltage 200 400 600 V
DC
T 110 C
I 150 150 150 150 150 A
Continuous forward current C
F
Surge non-repetitive forward
I T = 25 C, t = 8.3 ms 3740 3740 3740 3740 3740 A
F,SM C p
current, Half Sine Wave
2
I t for fusing I t t = 8.3ms 58000 58000 58000 58000 58000
2 A sec
2
Operating temperature T -40 to 200 -40 to 200 -40 to 200 -40 to 200 -40 to 200 C
j
T -40 to 200 -40 to 200
Storage temperature -40 to 200 -40 to 200 -40 to 200 C
stg
Electrical characteristics, at Tj = 25 C, unless otherwise specified
Conditions 150K(R)80A 150K(R)100A
Parameter Symbol 150K(R)20A 150K(R)40A 150K(R)60A Unit
V I = 150 A, T = 25 C 1.33 1.33 V
Diode forward voltage F F j 1.33 1.33 1.33
I V = V , T = 175 C
Reverse current 35 35 35 32 24 mA
R R RRM j
Thermal characteristics
Thermal resistance, junction -
R 0.25 0.25 0.25 0.25 0.25 C/W
thJC
case
www.genesicsemi.com 1150K(R)20A thru 150K(R)100A
www.genesicsemi.com 2