CNY17F
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Vishay Semiconductors
Optocoupler, Phototransistor Output, no Base Connection
FEATURES
Isolation test voltage, 5000 V
RMS
No base terminal connection for improved
1 6
A NC
common mode interface immunity
Long term stability
C 2 5 C
Industry standard dual-in-line package
4
NC 3 E Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is CNY17F. This model number should be
i179004-14
used when consulting safety agency documents.
UL file no. E52744
DESCRIPTION
cUL tested to CSA 22.2 bulletin 5A
The CNY17F is an optocoupler consisting of a gallium
DIN EN 60747-5-5 (VDE 0884-5), available with option 1
arsenide infrared emitting diode optically coupled to a
silicon planar phototransistor detector in a plastic plug-in
BSI: EN 60065, EN 60950-1
DIP-6 package.
FIMKO EN60950
The coupling device is suitable for signal transmission
CQC GB8898-2011
between two electrically separated circuits. The potential
difference between the circuits to be coupled is not allowed
to exceed the maximum permissible reference voltages.
In contrast to the CNY17 series, the base terminal of the
F type is not conected, resulting in a substantially improved
common-mode interference immunity.
ORDERING INFORMATION
DIP-6 Option 6
C N Y1 7 F - # X0 # # T
7.62 mm 10.16 mm
PART NUMBER CTR PACKAGE OPTION TAPE
BIN AND
Option 7 Option 9
REEL
> 8 mm 8 mm typ.
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17F-1 CNY17F-2 CNY17F-3 CNY17F-4
DIP-6, 400 mil, option 6 CNY17F-1X006 CNY17F-2X006 CNY17F-3X006 CNY17F-4X006
(1) (1) (1) (1)
SMD-6, option 7 CNY17F-1X007 CNY17F-2X007T CNY17F-3X007T CNY17F-4X007T
(1) (1) (1) (1)
SMD-6, option 9 CNY17F-1X009T CNY17F-2X009T CNY17F-3X009T CNY17F-4X009T
VDE, UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17F-1X001 CNY17F-2X001 CNY17F-3X001 CNY17F-4X001
DIP-6, 400 mil, option 6 CNY17F-1X016 CNY17F-2X016 CNY17F-3X016 CNY17F-4X016
(1) (1) (1) (1)
SMD-6, option 7 CNY17F-1X017 CNY17F-2X017 CNY17F-3X017 CNY17F-4X017
(1) (1)
SMD-6, option 9 CNY17F-1X019 CNY17F-2X019 CNY17F-3X019 -
Notes
Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on end.
Rev. 2.2, 08-Jan-14 Document Number: 83607
1
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CNY17F
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V 6V
R
DC forward current I 60 mA
F
Surge forward current t 10 s I 2.5 A
FSM
Power dissipation P 100 mW
diss
OUTPUT
Collector emitter breakdown voltage BV 70 V
CEO
Collector current I 50 mA
C
Collector peak current t /T = 0.5, t 10 ms I 100 mA
p p CM
Output power dissipation P 150 mW
diss
COUPLER
Isolation test voltage between emitter and
t = 1 min V 5000 V
ISO RMS
detector
Storage temperature range T -55 to +150 C
stg
Ambient temperature range T -55 to +110 C
amb
Junction temperature T 100 C
j
(1)
Soldering temperature 2 mm from case, 10 s T 260 C
sld
Total power dissipation P 250 mW
diss
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through
hole parts (DIP).
300
Coupled device
250
200
Phototransistor
150
100
IR-diode
50
0
0 20 40 60 80 100 120
T - Ambient Temperature (C)
amb
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I = 60 mA V 1.39 1.65 V
F F
Breakdown voltage I = 10 A V6V
R BR
Reverse current V = 6 V I 0.01 10 A
R R
Capacitance V = 0 V, f = 1 MHz C 25 pF
R O
OUTPUT
Collector emitter capacitance V = 5 V, f = 1 MHz C 5.2 pF
CE CE
Base collector capacitance V = 5 V, f = 1 MHz C 6.5 pF
CE BC
Emitter base capacitance V = 5 V, f = 1 MHz C 7.5 pF
CE EB
Rev. 2.2, 08-Jan-14 Document Number: 83607
2
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P - Total Power Dissipation (mW)
tot