BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT-23 Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Mechanical Data Case : SOT- 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed High temperature soldering guaranteed : 260C/10s Weight : 0.008 grams (approximately) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units Parameter Power Dissipation P 200 mW D BC856 -80 Collector-Base Voltage V -50 V BC857 CBO BC858 -30 -65 BC856 V Collector-Emitter Voltage -45 V BC857 CEO BC858 -30 Emitter-Base Voltage V -5 V EBO Collector Current I -0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes : 1. Valid provided that electrodes are kept at ambient temperature Version : F14Small Signal Product o Electrical Characteristics ( T = 25 C unless otherwise noted ) A Symbol Min Max Units Parameter BC856 -80 BC857 I = -10 AI = 0 V - V Collector-Base Breakdown Voltage -50 C E (BR)CBO BC858 -30 BC856 -65 BC857 I = -10mA I = 0 V - V Collector-Emitter Breakdown Voltage -45 C B (BR)CEO BC858 -30 I = -1 AI = 0 V Emitter-Base Breakdown Voltage -5 - V E C (BR)EBO BC856 V = -70V - -100 CB I = 0 I Collector Cut-off Current BC857 V = -45V - -100 nA E CBO CB BC858 V = -25V - -100 CB V = -5V I =0 I Emitter Cut-off Current --0.1 A EB C EBO BC856A, BC857A, BC858A 125 250 BC856B, BC857B, BC858B V = -5V I = -2mA h DC Current Gain 220 475 CE C FE BC857C, BC858C 420 800 Collector-Emitter Saturation Voltage I = -100mA I = -5mA V - -0.65 V C B CE(sat) I = -100mA I = -5mA V Base-Emitter Saturation Voltage --1.1 V C B BE(sat) Transition Frequency V = -5V I = -10mA f= 100MHz f 100 - MHz CE C T Version : F14