X-On Electronics has gained recognition as a prominent supplier of BC546B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC546B Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC546B Diotec

BC546B electronic component of Diotec
Images are for reference only
See Product Specifications
Part No.BC546B
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 65V; 100mA; 500mW; TO92
Datasheet: BC546B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
1313: AUD 0.1066 ( AUD 0.12 Inc GST) ea
Line Total: AUD 139.9658 ( AUD 153.96 Inc GST) 
Availability - 33890
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ: 1313  Multiples: 1
Pack Size: 1
Availability Price Quantity
33518
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.4388
10 : AUD 0.3218
25 : AUD 0.2319
100 : AUD 0.163
250 : AUD 0.1149

33890
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1313
Multiples : 1
1313 : AUD 0.1066
4000 : AUD 0.0776
12000 : AUD 0.0698
20000 : AUD 0.0582

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC546B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC546B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC546,A,B BC547,A,B,C BC548,A,B,C www.centralsemi.com DESCRIPTION: SILICON The CENTRAL SEMICONDUCTOR BC546, BC547, NPN TRANSISTORS BC548 series devices are silicon NPN small signal transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (T =25C) SYMBOL BC546 BC547 BC548 UNITS A Collector-Base Voltage V 80 50 30 V CBO Collector-Emitter Voltage V 80 50 30 V CES Collector-Emitter Voltage V 65 45 30 V CEO Emitter-Base Voltage V 6.0 6.0 5.0 V EBO Continuous Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Base Current I 200 mA BM Peak Emitter Current I 200 mA EM Power Dissipation P 500 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 250 C/W JA Thermal Resistance 150 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=30V 15 nA CBO CB I V =30V, T=150C 5.0 A CBO CB A V I =10mA, I=0.5mA 250 mV CE(SAT) C B V I =100mA, I=5.0mA 600 mV CE(SAT) C B V I =10mA, I=0.5mA 700 mV BE(SAT) C B V I =100mA, I=5.0mA 900 mV BE(SAT) C B V V =5.0V, I=2.0mA 580 700 mV BE(ON) CE C V V =5.0V, I=10mA 770 mV BE(ON) CE C h V =5.0V, I =10A (BC546,A, BC547,A, BC548,A) 90 FE CE C h V =5.0V, I =10A (BC546B, BC547B, BC548B) 150 FE CE C h V =5.0V, I =10A (BC547C, BC548C) 270 FE CE C h V =5.0V, I =2.0mA (BC546) 110 450 FE CE C h V =5.0V, I =2.0mA (BC546A, BC547A, BC548A) 110 220 FE CE C h V =5.0V, I =2.0mA (BC546B, BC547B, BC548B) 200 450 FE CE C h V =5.0V, I =2.0mA (BC547, BC548) 110 800 FE CE C h V =5.0V, I =2.0mA (BC547C, BC548C) 420 800 FE CE C h V =5.0V, I =2.0mA, f=1.0kHz 125 900 fe CE C f V =5.0V, I =10mA, f=35MHz 300 MHz T CE C C V =10V, I =0, f=1.0MHz 2.5 pF ob CB E C V =0.5V, I =0, f=1.0MHz 9.0 pF ib EB C NF V =5.0V, I =0.2mA, R=2.0k, CE C G B=200Hz, f=1.0kHz 2.0 10 dB R1 (13-December 2013) BC546,A,B BC547,A,B,C BC548,A,B,C SILICON NPN TRANSISTORS TO-92-18R CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3) Emitter MARKING: FULL PART NUMBER R1 (13-December 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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