ZXMN6A08E6Q 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(ON) Fast Switching Speed T = +25C A Low Gate Drive 3.5A 80m V =10V GS 60V Low Threshold 2.5A 150m V =4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance and yet PPAP Available maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SOT26 Applications Case Material: Molded Plastic, Green Molding Compound DC-DC Converters UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Disconnect Switches Terminals: Finish - Matte Tin Annealed over Copper Leadframe Motor Control e3 Solderable per MIL-STD-202, Method 208 Weight: 0.018 grams (Approximate) SOT26 D G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4 & 5) Part Number Compliance Case Quantity per reel ZXMN6A08E6QTA Automotive SOT26 3,000 Note: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN6A08E6Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GS (Note 7) 3.5 Continuous Drain Current V = 10V T = +70C (Note 7) I 2.8 A GS A D (Note 6) 2.8 Pulsed Drain Current V = 10V (Note 8) I 16 A GS DM Continuous Source Current (Body diode) (Note 7) I 2.6 A S Pulsed Source Current (Body diode) (Note 8) I 16 A SM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit 1.1 (Note 6) 8.8 Power Dissipation W P D Linear Derating Factor mW/C 1.7 (Note 7) 13.6 (Note 6) 113 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 73 Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note 6, except the device is measured at t 10 seconds. 8. Same as Note 6, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 2 of 8 ZXMN6A08E6Q March 2015 Diodes Incorporated www.diodes.com Document Number DS36690 Rev. 3 - 2 ADVANCE INFORMATION