Super323 SOT323 PNP SILICON POWER ZUMT720 (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION * 1A Peak Pulse Current * Excellent H Characteristics Up To 1A (pulsed) FE * Low Saturation Voltage * Low Equivalent On Resistance R CE(sat) APPLICATIONS * Boost functions in DC-DC converters * Motor driver functions DEVICE TYPE COMPLEMENT PARTMARKING R CE(sat) ZUMT720 ZUMT619 T73 240mV at 750mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current** I -1 A CM Continuous Collector Current I -0.75 A C Base Current I -200 mA B Power Dissipation at T =25C* P 385 mW amb tot 500 Operating and Storage Temperature T :T -55 to +150 C j stg Range Recommended P calculated using FR4 measuring 10 x 8 x 0.6mm (still air). tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 size25x25x0.6mm and using comparable measurement methods adopted by other suppliers.ZUMT720 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -40 V I =-100A (BR)CBO C Breakdown Voltage Collector-Emitter V -40 V I = -10mA* (BR)CEO C Breakdown Voltage Emitter-Base V -5 V I = -100A (BR)EBO E Breakdown Voltage Collector Cut-Off I -10 nA V =-35V CBO CB Current Emitter Cut-Off I -10 nA V =-4V EBO EB Current Collector Emitter I -10 nA V =-35V CES CES Cut-Off Current Collector-Emitter V -50 -65 mV I = -0.1A, I = -10mA* CE(sat) C B Saturation Voltage -90 -120 mV I = -0.25A, I =-20mA* C B -140 -200 mV I = -0.5A, I =-50mA* C B -180 -250 mV I = -0.75A, I =-100mA* C B Base-Emitter V -1000 -1100 mV I = -0.75A, I = -100mA* BE(sat) C B Saturation Voltage Base-Emitter V -890 -1100 mV I = -0.75A, V = -2V* BE(on) C CE Turn-On Voltage Static Forward h 300 510 I = -10mA, V =-2V* FE C CE Current Transfer 300 450 I = -0.1A, V = -2V* C CE Ratio 90 190 I = -0.5A, V =-2V* C CE 40 60 I = -0.75A, V = -2V* C CE 20 30 I = -1A, V = -2V* C CE Transition f 220 MHz I = -50mA, V =-10V T C CE Frequency f= 100MHz Output Capacitance C 8pFV = -10V, f=1MHz obo CB Turn-On Time t 75 ns V = -10V, I =-0.75A (on) CC C I =I =-100mA B1 B2 Turn-Off Time t 315 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%