MMSTA55/MMSTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Type Available Dim Min Max (MMSTA05/MMSTA06) C A 0.25 0.40 Ideal for Low Power Amplification and Switching B 1.15 1.35 Ultra-Small Surface Mount Package B C Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 Gree Device (Note 3 and 4) BE D 0.65 Nominal G E 0.30 0.40 Mechanical Data H G 1.20 1.40 Case: SOT-323 H 1.80 2.20 Case Material: Molded Plastic,Gree Molding K M Compound, Note 4. UL Flammability Classification J 0.0 0.10 Rating 94V-0 K 0.90 1.00 J Moisture Sensitivity: Level 1 per J-STD-020C L D E L 0.25 0.40 Terminal Connections: See Diagram M 0.10 0.18 Terminals: Solderable per MIL-STD-202, Method 208 C Lead Free Plating (Matte Tin Finish annealed over 0 8 Alloy 42 leadframe). All Dimensions in mm MMSTA55 Marking K2H, K2G (See Page 3) MMSTA56 Marking K2G (See Page 3) Ordering & Date Code Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol MMSTA55 MMSTA56 Unit Collector-Base Voltage V -60 -80 V CBO Collector-Emitter Voltage V -60 -80 V CEO Emitter-Base Voltage -4.0 V V EBO Collector Current - Continuous (Note 1) -500 mA I C Power Dissipation (Note 1) 200 mW P d Thermal Resistance, Junction to Ambient (Note 1) 625 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage MMSTA55 -60 V V I = -100A, I = 0 (BR)CBO C E MMSTA56 -80 Collector-Emitter Breakdown Voltage MMSTA55 -60 V V I = -1.0mA, I = 0 (BR)CEO C B MMSTA56 -80 Emitter-Base Breakdown Voltage -4.0 V V I = -100A, I = 0 (BR)EBO E C V = -60V, I = 0 Collector Cutoff Current MMSTA55 CB E -100 nA I CBO MMSTA56 V = -80V, I = 0 CB E Collector Cutoff Current MMSTA55 V = -60V, I = 0V CE BO -100 nA I CEX MMSTA56 V = -80V, I = 0V CE BO ON CHARACTERISTICS (Note 5) I = -10mA, V = -1.0V C CE DC Current Gain 100 h FE I = -100mA, V = -1.0V C CE Collector-Emitter Saturation Voltage -0.25 V V I = -100mA, I = -10mA CE(SAT) C B Base-Emitter Saturation Voltage -1.2 V V I = -100mA, V = -1.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS V = -1.0V, I = -100mA, CE C Current Gain-Bandwidth Product 50 MHz f T f = 100MHz Notes: 5. Short duration pulse test used to minimize self-heating effect. 0.25 200 I C = 10 I B 0.20 150 T = 25C A 0.15 100 0.10 T = 150C A 50 T = -50C A 0.05 0 0 0 25 50 150 175 200 75 100 125 110 100 1,000 T , AMBIENT TEMPERATURE (C) A I , COLLECTOR CURRENT (mA) C Fig. 1, Max Power Dissipation vs. Ambient Temperature Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1,000 1.0 V = 5V CE 0.9 V = 5V CE T = 150C A 0.8 T = -50C A 0.7 T = 25C A 0.6 100 T = 25C 0.5 A T = 150C A T = -50C A 0.4 0.3 0.2 0.1 10 0.1 1 10 100 10 1 100 1,000 I , COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (mA) C Fig. 4 Base Emitter Voltage vs. Collector Current Fig. 3, DC Current Gain vs. Collector Current MMSTA55/MMSTA56 DS30167 Rev. 10 - 2 2 of 3 Diodes Incorporated www.diodes.com h, DC CURRENT GAIN P , POWER DISSIPATION (mW) FE D V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) V , BASE EMITTER VOLTAGE (V) BE(ON)