MMSTA05/MMSTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Type Available C Dim Min Max (MMSTA55/MMSTA56) A 0.25 0.40 Ideal for Medium Power Amplification and Switching B C B 1.15 1.35 Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 BE Gree Device (Notes 3 and 4) D 0.65 Nominal G E 0.30 0.40 Mechanical Data H G 1.20 1.40 Case: SOT-323 K M H 1.80 2.20 Case Material: Molded Plastic,Gree Molding Compound, Note 4. UL Flammability Classification J 0.0 0.10 Rating 94V-0 J K 0.90 1.00 D E L Moisture Sensitivity: Level 1 per J-STD-020C L 0.25 0.40 Terminal Connections: See Diagram M 0.10 0.18 Terminals: Solderable per MIL-STD-202, Method 208 C Lead Free Plating (Matte Tin Finish annealed over 0 8 Alloy 42 leadframe). All Dimensions in mm MMSTA05 Marking K1H, K1G (See Page 3) MMSTA06 Marking K1G (See Page 3) Order & Date Code Information: See Page 3 B E Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol MMSTA05 MMSTA06 Unit Collector-Base Voltage 60 80 V V CBO Collector-Emitter Voltage 60 80 V V CEO Emitter-Base Voltage V 4.0 V EBO Collector Current - Continuous (Note 1) I 500 mA C Power Dissipation (Note 1) P 200 mW d Thermal Resistance, Junction to Ambient (Note 1) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage MMSTA05 60 V V I = 100A, I = 0 (BR)CBO C E MMSTA06 80 Collector-Emitter Breakdown Voltage MMSTA05 60 V V I = 1.0mA, I = 0 (BR)CEO C B MMSTA06 80 Emitter-Base Breakdown Voltage V 4.0 V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current MMSTA05 V = 60V, I = 0 CB E I 100 nA CBO MMSTA06 V = 80V, I = 0 CB E V = 60V, I = 0V Collector Cutoff Current MMSTA05 CE BO 100 nA I CES MMSTA06 V = 80V, I = 0V CE BO ON CHARACTERISTICS (Note 5) I = 10mA, V = 1.0V C CE DC Current Gain h 100 FE I = 100mA, V = 1.0V C CE Collector-Emitter Saturation Voltage V 0.25 V I = 100mA, I = 10mA CE(SAT) C B Base-Emitter Saturation Voltage V 1.2 V I = 100mA, V = 1.0V BE(SAT) C CE SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product f 100 MHz V = 2.0V, I = 10mA, f = 100MHz T CE C Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 200 10 150 1 100 0.1 50 0.01 0 0 175 200 25 50 75 100 125 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) T , AMBIENT TEMPERATURE (C) A A Fig. 1, Max Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature 2.0 0.500 I C 0.450 1.8 = 10 I B 0.400 1.6 0.350 1.4 I = 30mA C 0.300 1.2 T = 25C A I = 10mA C 0.250 1.0 T = 150C A 0.200 0.8 0.150 0.6 I = 100mA C 0.100 0.4 I = 1mA C 0.2 0.050 T = -50C A 0 0 1 10 1,000 100 0.001 0.01 0.1 1 10 100 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (mA) B C Fig. 3 Typical Collector Saturation Region Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current 1.0 10,000 V = 5V CE 0.9 0.8 1,000 0.7 0.6 100 0.5 0.4 10 0.3 0.2 0.1 1 0.1 1 10 100 1 10 100 1,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 5, DC Current Gain vs. Collector Current Fig. 6, Base Emitter Voltage vs. Collector Current MMSTA05/MMSTA06 DS30168 Rev. 9 - 2 2 of 3 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) h, DC CURRENT GAIN D FE V, COLLECTOR EMITTER VOLTAGE (V) CE V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V) I , COLLECTOR-BASE CURRENT (nA) CBO V , BASE EMITTER VOLTAGE (V) BE(ON)