MMDT4413 COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case: SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. NPN = 4401 UL Flammability Classification Rating 94V-0 PNP = 4403 Moisture Sensitivity: Level 1 per J-STD-020 Ideal for Medium Power Amplification and Switching Terminals: Finish Matte Tin Finish. Solderable per e3 Ultra-Small Surface Mount Package MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT363 C B E 1 2 2 E B C 1 1 2 Top View Device Schematic Top View Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel MMDT4413-7-F K13 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMDT4413 Absolute Maximum Ratings: NPN, 4401 Type (Q ) ( T = +25C unless otherwise specified.) 1 A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage 6 V V EBO Collector Current 600 mA I C Absolute Maximum Ratings: PNP, 4403 Type (Q ) ( T = +25C unless otherwise specified.) 2 A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage -5 V V EBO Collector Current -600 mA I C Thermal Characteristics Total Device ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) Total Device P 200 mW D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Note: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. Thermal Characteristics Total Device 250 200 150 100 50 0 0 40 80 120 160 200 T , AMBIENT TEMPERATURE (C) A Fig. 1, Power Derating Curve (Total Device) 2 of 8 August 2013 MMDT4413 Diodes Incorporated www.diodes.com Document number: DS30121 Rev. 11 - 2 P , POWER DISSIPATION (mW) d