X-On Electronics has gained recognition as a prominent supplier of MMBT5551-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551-7-F Diodes Incorporated

MMBT5551-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.MMBT5551-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS NPN 300mW
Datasheet: MMBT5551-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
3000: AUD 0.0248 ( AUD 0.03 Inc GST) ea
Line Total: AUD 74.4 ( AUD 81.84 Inc GST) 
Availability - 995220
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1411350
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0648
6000 : AUD 0.0601
9000 : AUD 0.0499
30000 : AUD 0.0489
75000 : AUD 0.044
150000 : AUD 0.0382

1514
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1561
Multiples : 1
1561 : AUD 0.0514

995220
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0248
9000 : AUD 0.0248
30000 : AUD 0.0248
60000 : AUD 0.0248
120000 : AUD 0.0248

2592
Ship by Fri. 18 Oct to Wed. 23 Oct
MOQ : 20
Multiples : 20
20 : AUD 0.0502
200 : AUD 0.0409
600 : AUD 0.0357
3000 : AUD 0.0326
9000 : AUD 0.0298
21000 : AUD 0.0284

133663
Ship by Thu. 17 Oct to Mon. 21 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.3433
10 : AUD 0.2231
100 : AUD 0.0824
1000 : AUD 0.0584
3000 : AUD 0.0378

1690
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1
Multiples : 1
1 : AUD 0.3552
5 : AUD 0.2675
10 : AUD 0.2215
50 : AUD 0.1358
100 : AUD 0.1107

3736440
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 9000
Multiples : 3000
9000 : AUD 0.0365

1514
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1561
Multiples : 1
1561 : AUD 0.0648
6000 : AUD 0.0601
9000 : AUD 0.0499
30000 : AUD 0.0489
75000 : AUD 0.044
150000 : AUD 0.0382

1411350
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 3000
Multiples : 3000
3000 : AUD 0.0648

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the MMBT5551-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMBT5551-7-F is a transistors bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is a NPN 300mW surface mount (SMD) device, specifically designed for use in a wide range of applications. The device features a low leakage current, high gain, and high output current, as well as respectable high speed switching and good thermal stability. It is also noted for its low power consumption and its ability to be used in a wide range of temperature ranges (-65°C to +150°C). This device can be used for various power applications, allowing users with different power requirements to use a single device for their applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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