X-On Electronics has gained recognition as a prominent supplier of FZT651QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT651QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT651QTA Diodes Incorporated

Hot FZT651QTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.FZT651QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 3 A 175MHz 3 W Surface Mount SOT-223-3
Datasheet: FZT651QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
47: AUD 0.4111 ( AUD 0.45 Inc GST) ea
Line Total: AUD 19.3217 ( AUD 21.25 Inc GST) 
Availability - 45
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ: 47  Multiples: 1
Pack Size: 1
Availability Price Quantity
1653
Ship by Thu. 17 Oct to Mon. 21 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.0436
10 : AUD 0.8136
100 : AUD 0.678
500 : AUD 0.5922
1000 : AUD 0.5166
2000 : AUD 0.4669
5000 : AUD 0.4566
10000 : AUD 0.4411
25000 : AUD 0.4257

625
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1
Multiples : 1
1 : AUD 1.3791
10 : AUD 1.0615
54 : AUD 0.5078
147 : AUD 0.4806
10000 : AUD 0.4764

45
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 47
Multiples : 1
47 : AUD 0.4111

226980
Ship by Fri. 11 Oct to Thu. 17 Oct
MOQ : 1000
Multiples : 1000
1000 : AUD 0.4948

   
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We are delighted to provide the FZT651QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT651QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) has been designed to meet the Case: SOT223 stringent requirements of automotive applications. Case Material: Molded Plastic. Green Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - Matte Tin Plated Leads Solderable per BV > 60V MIL-STD-202, Method 208 CEO I = 3A High Continuous Current Weight: 0.112 grams (Approximate) C I = 6A Peak Pulse Current CM Low Saturation Voltage V < 300mV 1A CE(sat) Complementary PNP Type: FZT751Q Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT223 Top View Device Symbol Pin-Out Top View Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT651QTA Automotive FZT651 7 12 1,000 FZT651QTC Automotive FZT651 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT651Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage 60 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current I 3 A C Peak Pulse Current I 6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 2 W Power Dissipation P D (Note 7) 3 W (Note 6) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 7) 41.7 C/W Thermal Resistance, Junction to Leads (Note 8) 12.9 C/W R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3a Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT651Q March 2015 Diodes Incorporated www.diodes.com Document Number DS36917 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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