A Product Line of Diodes Incorporated FCX491A 40V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BV > 40V Case: SOT89 CEO I = 1A high Continuous Current Case material: molded plastic. Green molding compound. C Low saturation voltage V < 500mV 1A UL Flammability Rating 94V-0 CE(sat) Complementary PNP type: FCX591A Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads, Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.05 grams (Approximate) PPAP capable (Note 4) Applications Power MOSFET gate driving Low loss power switching SOT89 C E C B C B E Top View Top View Device Sy mbol Pin Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FCX491ATA AEC-Q101 N2 7 12 1,000 FCX491AQTA Automotive N2 7 12 1,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated FCX491A Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 1 A C Peak Pulse Current 2 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 1 W D Thermal Resistance, Junction to Ambient Air (Note 6) R 125 C/W JA Thermal Resistance, Junction to Leads (Note 7) R 10.01 C/W JL Operating and Storage Temperature Range T T -65 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions device measured when operating in steady state condition. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FCX491A 2 of 7 October 2012 Diodes Incorporated Datasheet Number: DS33055 Rev. 5 - 2 www.diodes.com