DZT2222A NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DZT2907A) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) 4 SOT-223 Mechanical Data COLLECTOR Case: SOT-223 2,4 3 E Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 C 4 2 C 1 Moisture Sensitivity: Level 1 per J-STD-020C BASE Terminals: Finish - Matte Tin annealed over Copper Leadframe 1 B 3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 EMITTER Marking Information: See Page 4 TOP VIEW Ordering Information: See Page 4 Weight: 0.115 grams (approximate) Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 75 V V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6 V V EBO Collector Continuous Current I 600 mA C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation T = 25C (Note 3) P 1 W A d Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 125 C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 75 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 40 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6 V I = 10A, I = 0 (BR)EBO E C 10 nA V = 50V, I = 0 CB E Collector Cut-Off Current I CBO 10 A V = 50V, I = 0, T = 150C CB E A Emitter Cut-Off Current I 10 nA V = 3V, I = 0 EBO EB C Collector-Emitter Cut-Off Current I 10 nA V = 60V, V = 3V CEX CE EB(off) ON CHARACTERISTICS (Note 4) 0.3 V I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V CE(SAT) 1.0 V I = 500mA, I = 50mA C B 0.6 1.2 V I = 150mA, I = 15mA C B Base-Emitter Saturation Voltage V BE(SAT) 2.0 V I = 500mA, I = 50mA C B 35 I = 0.1mA, V = 10V C CE 50 I = 1mA, V = 10V C CE 75 I = 10mA, V = 10V C CE DC Current Gain V h 35 I = 10mA, V = 10V, T = -55C FE C CE A 100 300 I = 150mA, V = 10V C CE 50 I = 150mA, V = 1V C CE 40 I = 500mA, V = 10V C CE SMALL SIGNAL CHARACTERISTICS Transition Frequency 300 MHz f I = 20mA, V = 20V, f = 100MHz T C CE Output Capacitance 8 pF C V = 10V, I = 0, f = 1MHz obo CB E Input Capacitance 25 pF C V = 0.5V, I = 0, f = 1MHz ibo EB C SWITCHING CHARACTERISTICS Delay Time 10 ns t d V = 30V, V = 0.5V, I = 150mA, I = 15mA CE EB(off) C B1 Rise Time t 25 ns r Storage Time t 225 ns s V = 30V, I = 150mA, I = I = 15mA CE C B1 B2 Fall Time t 60 ns f Notes: 4. Measured under pulsed conditions. Pulse width = 300 S. Duty Cycle, d< = 2%. R = 125C/W JA V , COLLECTOR EMITTER VOLTAGE (V) CE DZT2222A DS30481 Rev. 5 - 2 2 of 4 Diodes Incorporated www.diodes.com NEW PRODUCT I, COLLECTOR CURRENT (A) C