Green DSRHD10 1.0A DSR BRIDGE DIODESTAR RECTIFIER Product Summary Features and Benefits Low reverse leakage ensuring greater stability at higher V (V) I(A) V max(V) +25C I (mA) +25C RRM O F R max temperatures 1000 1.0 1.15V 0.01 Low forward voltage (V ) minimises conduction losses and F improving efficiency. Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This 1.0A DiodeStar Rectifier has been designed for use in general purpose rectifier. It is ideally suited for use as a: Bridge Rectifier Mechanical Data Case: T-MiniDIP Case Material: Molded Plastic Green Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin over Copper Lead Frame, Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 0.092 grams (approximate) T-MiniDIP Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DSRHD10-13 T-MiniDIP 5000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DSRHD10 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 1000 V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1.0 A O Non-Repetitive Peak Forward Surge Current 30 A I FSM 8.3ms Single Half Sine-Wave Superimposed on Rated Load (Per Diode) Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 107 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Typ Max Unit Test Condition 0.88 0.95 I = 0.4A, T = +25C F J Forward Voltage (Per Diode) V V F 0.92 1.15 I = 1.0A, T = +25C F J 0.08 10 V = 1000V, T = +25C R J Reverse Current (Note 6) (Per Diode) I A R 5 150 V = 1000V, T = +125C R J Notes: 5. Device mounted on FR-4 substrate, 1.0 x1.0 , 2oz, single-sided, PC boards with 0.2 x0.25 copper pad. 6. Short duration pulse test used to minimize self-heating effect 1.4 10 Note 5 1.2 1 1 0.8 T = 150C A T = 125C 0.6 A 0.1 0.4 T = 100C A T = 75C A 0.2 T = 25C A 0 0.01 00.5 11.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 I , AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Figure 1 Forward Power Dissipation Figure 2 Typical Forward Characteristics 2 of 5 April 2013 DSRHD10 Diodes Incorporated www.diodes.com Document number: DS35961 Rev. 5 - 2 ADVANCED INFORMATION P , POWER DISSIPATION (W) D I , INSTANTANEOUS FORWARD CURRENT (A) F