Green
DMTH6010LK3Q
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to 175C ideal for high ambient temperature
I Max
D
BV R Max
DSS DS(ON)
environments
T = +25C
C
100% Unclamped Inductive Switching ensures more reliable
8m @ V = 10V 70A
GS
and robust end application
60V
Low On-Resistance
12m @ V = 4.5V 50A
GS
Low Input Capacitance
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
Case: TO252
PPAP and is ideal for use in:
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Engine Management Systems
Moisture Sensitivity: Level 1 per J-STD-020
Body Control Electronics
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
DCDC Converters
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252
Equivalent Circuit
Top View Pin Out Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMTH6010LK3Q-13 TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6010LK3Q
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 14.8
A
Continuous Drain Current, V = 10V (Note 6) I A
GS D
11.9
T = +70C
A
T = +25C 70
C
A
Continuous Drain Current, V = 10V (Note 7) I
GS D
50
T = +100C
C
Maximum Continuous Body Diode Forward Current (Note 7) I 60 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 130 A
DM
Avalanche Current, L = 0.1mH I 20 A
AS
Avalanche Energy, L = 0.1mH 20 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 31 W
P
D
Thermal Resistance, Junction to Ambient (Note 6) 47 C/W
R
JA
Total Power Dissipation (Note 7) 60 W
P
D
Thermal Resistance, Junction to Case (Note 7) 2.5 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA
DSS GS D
- - 1 A V = 48V, V = 0V
DS GS
Zero Gate Voltage Drain Current (Note 9) I V = 48V, V = 0V,
DSS DS GS
- - 100 A
TJ = 125C
Gate-Source Leakage - - 100 nA
IGSS VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 - 3 V
VGS(TH) VDS = VGS, ID = 250A
- 6.3 8
V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
- 8.3 12
V = 4.5V, I = 20A
GS D
Diode Forward Voltage - 0.9 1.2 V
V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance - 2090 -
C
iss
V = 30V, V = 0V,
DS GS
746
Output Capacitance C - - pF
oss
f = 1MHz
38.5
Reverse Transfer Capacitance C - -
rss
0.59
Gate Resistance R 0.1 1.8 V = 0V, V = 0V, f = 1MHz
g DS GS
19.3
Total Gate Charge (V = 4.5V) Q - -
GS g
41.3
Total Gate Charge (V = 10V) Q - -
GS g
nC V = 30V, I = 20A
DS D
6
Gate-Source Charge - -
Qgs
Gate-Drain Charge - 8.8 -
Q
gd
Turn-On Delay Time - 5.7 -
t
D(ON)
Turn-On Rise Time - 4.3 -
t V = 30V, V = 10V,
R DD GS
ns
Turn-Off Delay Time - 23.4 -
t I = 20A, R = 3
D(OFF) D g
9.7
Turn-Off Fall Time t - -
F
35.4
Body Diode Reverse Recovery Time t - - ns
RR
I = 20A, di/dt = 100A/s
F
38.2
Body Diode Reverse Recovery Charge Q - - nC
RR
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
DMTH6010LK3Q December 2015
Diodes Incorporated
www.diodes.com
Document number: DS38162 Rev. 2 - 2
ADVNAENWCE PDR IONDFUOCRTM ATION