DMT10H015LFG Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures On State Losses Are Minimized DS(ON) I D BV R max DSS DS(ON) Excellent Q R Product (FOM) T = +25C gd x DS (ON) C Advanced Technology for DC/DC Converters 13.5m V = 10V 42A GS Small Form Factor Thermally Efficient Package Enables Higher Density End Products 100V 36A 18m V = 6.0V GS Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product 32A 23.5m V = 4.5V GS 100% UIS (Avalanche) Rated Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Case: PowerDI 3333-8 Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Synchronous Rectifier Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Weight: 0.008 grams (Approximate) Pin 1 S D S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT10H015LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT10H015LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT10H015LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS 10 T = +25C A I A D 8.0 T = +70C A Continuous Drain Current (Note 5) V = 10V GS 42 T = +25C C A I D 26 T = +100C C Maximum Continuous Body Diode Forward Current (Note 5) I 1.5 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 75 A DM Avalanche Current (L = 3mH) 7.5 A I AS Avalanche Energy (L = 3mH) 85 mJ E AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.0 W A D 61 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA Total Power Dissipation T = +25C P 35 W C D 3.5 Thermal Resistance, Junction to Case C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 1.4 2.0 3.5 V V = V , I = 250A GS(TH) DS GS D 10.8 13.5 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R 13.3 18 m V = 6.0V, I = 20A DS(ON) GS D 17.9 23.5 V = 4.5V, I = 20A GS D Diode Forward Voltage V 0.9 1.3 V SD V = 0V, I = 20A GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 1,871 C iss V = 50V, V = 0V DS GS Output Capacitance 261 pF C oss f = 1MHz Reverse Transfer Capacitance 6.9 C rss 0.75 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 33.3 Total Gate Charge Q g V = 50V, I = 10A, DD D 6.9 Gate-Source Charge Q nC gs V = 10V GS 5.1 Gate-Drain Charge Q gd 6.5 Turn-On Delay Time t D(ON) 7.0 Turn-On Rise Time t R V = 50V, V = 10V, DD GS ns Turn-Off Delay Time 19.7 I = 10A, R = 6 t D G D(OFF) Turn-Off Fall Time 8.1 t F Reverse Recovery Time 37.9 ns t RR I = 10A, di/dt = 100A/s F Reverse Recovery Charge 51.9 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H015LFG October 2017 Diodes Incorporated www.diodes.com Document number: DS38222 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION