Green DMP4015SK3Q P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) Test In Production D V R Max (BR)DSS DS(ON) T = +25C C Low On-Resistance 11m V = -10V -35A GS Fast Switching Speed -40V -30A 15m V = -4.5V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Mechanical Data Applications Case: TO252 (DPAK) DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) D D G S Equivalent Circuit Top View Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging DMP4015SK3Q-13 Automotive TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP4015SK3Q Marking Information = Manufacturers Marking . P4015S = Product Type Marking Code P4015S YYWW = Date Code Marking YYWW YY = Year (ex: 13 = 2013) WW = Week (01 - 53) Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -40 V VDSS Gate-Source Voltage 25 V V GSS Steady T = +25C -35 C A Continuous Drain Current (Note 6) V = -10V I GS D State -27 T = +70C C Steady T = +25C -14 A I A D State -11 TA = +70C Continuous Drain Current (Note 6) V = -10V GS T = +25C -22 A t<10s A I D -18 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -100 A DM Maximum Body Diode Forward Current (Note 6) I -5.5 A S Avalanche Current (Note 7) I -22 A AS Avalanche Energy (Note 7) E 242 mJ AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 3.5 A Total Power Dissipation (Note 6) W P D T = +70C 2.2 A Steady State 36 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 15 C/W Steady State Thermal Resistance, Junction to Case (Note 6) R 4.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. UIS in production with L = 0.1mH, T = +25C. J 2 of 8 DMP4015SK3Q November 2015 Diodes Incorporated www.diodes.com Document number: DS36665 Rev. 4 - 2