Green DMP4015SK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) test in production D V R (BR)DSS DS(on) max T = +25C C Low on-resistance 11m V = -10V -35A GS Fast switching speed -40V 15m V = -4.5V -30A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Power management functions Terminal Connections: See Diagram Backlighting Terminals: Finish Matte Tin Finish annealed over Copper e3 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) D TO252 D G S Top View Top View Pin-Out Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMP4015SK3-13 Standard TO252 2,500/Tape & Reel DMP4015SK3Q-13 Automotive TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMP4015SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 25 V GSS T = +25C Steady C -35 A Continuous Drain Current (Note 5) V = -10V I GS D State -27 T = +70C C Steady T = +25C -14 A I A D State -11 T = +70C A Continuous Drain Current (Note 5) V = -10V GS T = +25C -22 A t<10s I A D -18 T = +70C A -100 A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I DM Maximum Body Diode Forward Current (Note 5) -5.5 A I S Avalanche Current (Note 6) I -57 A AS Avalanche Energy (Note 6) E 162 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 3.5 A Total Power Dissipation (Note 5) W P D T = +70C 2.2 A Steady state 36 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 15 C/W Steady state Thermal Resistance, Junction to Case (Note 5) R 4.5 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -40 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 25V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1.5 -2.0 -2.5 V V = V , I = -250A GS(th) DS GS D 7 11 V = -10V, I = -9.8A GS D Static Drain-Source On-Resistance R m DS(ON) 9 15 V = -4.5V, I = -9.8A GS D Forward Transfer Admittance Y 26 S V = -20V, I = -9.8A fs DS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4234 iss V = -20V, V = 0V DS GS Output Capacitance 1036 pF C oss f = 1.0MHz Reverse Transfer Capacitance 526 C rss Gate Resistance 7.77 R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge 47.5 Q g V = -20V, V = -5V DS GS Gate-Source Charge Q 14.2 nC gs I = -9.8A D Gate-Drain Charge Q 13.5 gd Turn-On Delay Time t 13.2 D(on) Turn-On Rise Time t 10.0 r V = -10V, V = -20V, GS DD ns Turn-Off Delay Time t 302.7 R = 6 , I = -1A D(off) G D Turn-Off Fall Time t 137.9 f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. UIS in production with L = 0.1mH, T = +25C. J 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 February 2013 DMP4015SK3 Diodes Incorporated www.diodes.com Document number: DS35480 Rev. 6 - 2