NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SSS DMP3035LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Low Gate Threshold Voltage A Low Input Capacitance 14m V = -20V -10A GS Fast Switching Speed -30V 18m V = -10V -8.8A GS Low Input/Output Leakage 36m V = -4.5V -6.2A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (Approximate) DC-DC Converters SO-8 D S D S D S G D G D S Top View Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP3035LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SSS DMP3035LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C -10 A Drain Current (Note 5) (V = -20V) I A GS D State -8 T = +70C A Pulsed Drain Current (Note 6) -80 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.0 W D Thermal Resistance, Junction to Ambient R 60 C/W JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -30 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS 100 V = 20V, V = 0V GS DS Gate-Source Leakage I nA GSS 800 V = 25V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -1 -2 V V = V , I = -250A GS(TH) DS GS D V = -20V, I = -11A 11 14 GS D Static Drain-Source On-Resistance R 15 18 m DS(ON) VGS = -10V, ID = -8A 27 36 V = -4.5V, I = -5A GS D Forward Transconductance G 12 S V = -10V, I = -12A fs DS D Diode Forward Voltage (Note 7) V -0.5 -1.1 V V = 0V, I = -2A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 1,655 pF iss V = -20V, V = 0V DS GS Output Capacitance C 286 pF oss f = 1.0MHz Reverse Transfer Capacitance C 240 pF rss Gate Resistance R 2.3 V = 0V, V = 0V, f = 1MHz G GS DS SWITCHING CHARACTERISTICS V = -15V, V = -4.5V, I = -8A 15.3 DS GS D Total Gate Charge Q g 30.7 V = -15V, V = -10V, I = -8A DS GS D nC Gate-Source Charge Q 3.5 V = -15V, V = -10V, I = -8A gs DS GS D Gate-Drain Charge Q 7.9 V = -15V, V = -10V, I = -8A gd DS GS D Turn-On Delay Time t 5.1 D(ON) Rise Time t 8 R V = -10V, V = -15V, GS DS ns R = 15, R = 6 Turn-Off Delay Time t 46 D G D(OFF) Fall Time t 30 F 2 Notes: 5. Device mounted on 1 inch FR-4 board with 2 oz. copper, in a still-air environment with T = +25C. A 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMP3035LSS September 2017 Diodes Incorporated www.diodes.com Document number: DS31443 Rev. 10 - 3