NOT RECOMMENDED FOR NEW DESIGN USE DMP3007LK3 DMP3010LK3 Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D V R (BR)DSS DS(on) max T = +25C Low On-Resistance A 8m VGS = -10V -17A Fast Switching Speed -30V -14.5A Lead-Free Finish RoHS Compliant (Notes 1 & 2) 10.2m V = -4.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: TO252 (DPAK) state resistance (R ) and yet maintain superior switching Case Material: Molded Plastic, Green Molding Compound. DS(ON) performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: FinishTin Finish annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (approximate) Power Management Functions Backlighting D D TO252 G D G S Top View S Top View Equivalent Circuit Pin-Out Ordering Information (Note 4 & 5) Part Number Compliance Case Packaging DMP3010LK3-13 Standard TO252 2500/Tape & Reel DMP3010LK3Q-13 Automotive TO252 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMP3010LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -17.0 A A I D State -13.0 T = +70C A Continuous Drain Current (Note 7) V = -10V GS T = +25C -27.0 A t<10s I A D -21.0 T = +70C A Steady T = +25C -14.5 A I A D State -11.5 T = +70C A Continuous Drain Current (Note 7) V = -4.5V GS T = +25C -23.0 A t<10s A I D -18.0 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I -100 A DM Maximum Body Diode Forward Current (Note 7) I 5.5 A S Avalanche Current (Note 8) I 47 A AS Avalanche Energy (Note 8) 113 mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 1.7 W D Steady state 72 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 29 C/W Total Power Dissipation (Note 7) P 3.4 W D Steady state 37 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 15 C/W Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -30 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -1.1 -1.6 -2.1 V V = V , I = -250A GS(th) DS GS D 6.5 8 V = -10V, I = -10A GS D Static Drain-Source On-Resistance m R DS (ON) 7.2 10.2 V = -4.5V, I = -10A GS D Forward Transfer Admittance Y 30 S V = -15V, I = -10A fs DS D Diode Forward Voltage V -0.65 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 6234 C iss V = 15V, V = 0V DS GS Output Capacitance 1500 pF C oss f = 1.0MHz Reverse Transfer Capacitance 774 C rss Gate Resistance 1.28 R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge 59.2 Q g V = -15V, V = -4.5V, DS GS Gate-Source Charge Q 16.1 nC gs I = -10A D Gate-Drain Charge Q 15.7 gd Turn-On Delay Time t 11.4 D(on) Turn-On Rise Time t 9.4 r V = -15V, V = -10V, DS GEN ns Turn-Off Delay Time t 260.7 R = 6, I = -1A D(off) G D Turn-Off Fall Time 99.3 t f Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8 .UIS in production with L = 0.1mH, T = +25C. J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. 2 of 7 December 2018 DMP3010LK3 Diodes Incorporated www.diodes.com Document number: DS35716 Rev. 6 - 3