DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: U-DFN2020-6 Type B 70m V = -4.5V Case Material: Molded Plastic, Green Molding Compound GS UL Flammability Classification Rating 94V-0 85m V = -2.5V GS Moisture Sensitivity: Level 1 per J-STD-020 86m (typ) V = -1.8V GS Terminal Connections: See Diagram Low Gate Threshold Voltage, -0.9V Max Terminals: Finish NiPdAu Annealed over Copper Leadframe Fast Switching Speed e4 Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Weight: 0.0065 grams (Approximate) Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability U-DFN2020-6 D 2 D 1 Type B S2 G2 D2 D1 G2 D1 G1 D2 G1 S1 S2 S1 Pin1 Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Case Packaging DMP2160UFDB-7 U-DFN2020-6 Type B 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2160UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage 12 V V GSS Drain Current (Note 5) -3.8 A I D Pulsed Drain Current (Note 6) -13 A I DM Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.4 W D Thermal Resistance, Junction to Ambient 89 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7 Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -20V, V = 0V DSS DS GS 100 V = 8V, V = 0V GS DS Gate-Source Leakage I nA GSS 800 V = 12V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.45 -0.9 V V = V , I = -250A GS(th) DS GS D VGS = -4.5V, ID = -2.8A 54 70 Static Drain-Source On-Resistance 68 85 m V = -2.5V, I = -2.0A R GS D DS (ON) 86 VGS = -1.8V, ID = -1.0A Forward Transfer Admittance Y 8 S V = -5V, I = -2.8A fs DS D Diode Forward Voltage (Note 7) V 0.7 -1.2 V V = 0V, I = -1.6A SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 536 pF iss V = -10V, V = 0V DS GS Output Capacitance C 68 pF oss f = 1.0MHz Reverse Transfer Capacitance 59 pF Crss Gate Resistance - 34 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge - 6.5 - nC Q g V = -4.5V, V = -10V, GS DD Gate-Source Charge - 0.8 - nC Q gs I = -1.5A D Gate-Drain Charge - 1.4 - nC Q gd 11.51 Turn-On Delay Time t - - ns D(on) 12.09 Turn-On Rise Time t - - ns r VGEN = -4.5V, VDD = -10V, 55.34 Turn-Off Delay Time t - - ns R = 10, R = 6 D(off) L G 27.54 Turn-Off Fall Time t - - ns f Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 2 of 6 DMP2160UFDB March 2015 Diodes Incorporated www.diodes.com Document number: DS31643 Rev. 9 - 2