DMP1011UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = -4.5V, T = +25C) Features GS A LD-MOS Technology with the Lowest Figure of Merit: V R Q Q I DSS DS(on) g gd D -R = 8.2m to Minimize On-State Losses DS(on) -8V 8.2m 8.1nC 1.8nC -10A -Q = 8.1nC for Ultra-Fast Switching g V = -0.8V typ. for a Low Turn-On Potential gs(th) Description CSP with Footprint 1.5mm 1.5mm Height = 0.60mm for Low Profile rd This 3 generation Lateral MOSFET (LD-MOS) is engineered to ESD = 6kV HBM Protection of Gate minimize on-state losses and switch ultra-fast, making it ideal for Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) high-efficiency power transfer. It uses Chip-Scale Package (CSP) to Halogen and Antimony Free. Green Device (Note 3) increase power density by combining low thermal impedance with Qualified to AEC-Q101 Standards for High Reliability minimal R per footprint area. DS(on) Mechanical Data Applications DC-DC Converters Case: U-WLB1515-9 Battery Management Terminal Connections: See Diagram Below Load Switch U-WLB1515-9 Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP1011UCB9-7 U-WLB1515-9 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1011UCB9 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -8 V DSS Gate-Source Voltage V -6 V GSS Steady T = +25C -10 A Continuous Drain Current (Note 5) V = -4.5V I A GS D State -8 TA = +70C Steady T = +25C -7.4 A A Continuous Drain Current (Note 6) V = -4.5V I GS D State -6.0 T = +70C A Pulsed Drain Current (Pulse duration 10s, duty cycle 1%) I -50 A DM Continuous Source Pin Current (Note 6) IS -2 Pulsed Source Pin Current (Pulse duration 10s, duty cycle 1%) ISM -15 I -0.5 A Continuous Gate Current G Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.89 W D Total Power Dissipation (Note 6) P 1.57 W D Thermal Resistance, Junction to Ambient (Note 5) R +142.1 C/W JA Thermal Resistance, Junction to Ambient (Note 6) +80.5 C/W RJA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -8 V V = 0V, I = -250A DSS GS D Gate to Source Voltage BV -6 V V = 0V, I = -250A SGS DS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -4.0V, V = 0V C DSS DS GS Gate-Source Leakage -100 nA I V = -4.0V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.4 -0.8 -1.1 V V V = V , I = -250A GS(th) DS GS D 8.2 10 V = -4.5V, I = -2A GS D Static Drain-Source On-Resistance R 10 13 m V = -3.0V, I = -2A DS (ON) GS D 11 14 V = -2.5V, I = -2A GS D Forward Transfer Admittance Y 16.8 S V = -4V, I = -2A fs DS D Diode Forward Voltage (Note 6) V -0.7 -1 V V = 0V, I = -2A SD GS S 6.3 Reverse Recovery Charge nC Qrr V = -5V, I = -2A, dd F 18.5 Reverse Recovery Time ns di/dt = 200A/s t rr DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 817 1,060 pF C iss V = -4V, V = 0V, DS GS Output Capacitance 595 770 pF C oss f = 1.0MHz Reverse Transfer Capacitance 269 350 pF C rss Series Gate Resistance 1.9 R V = 0V, V = 0V, f = 1.0MHz G DS GS 8.1 10.5 Total Gate Charge (4.5V) Q nC g V = -4.5V, V = -4V, GS DS 0.9 Gate-Source Charge Q nC gs I = -2A D 1.8 Gate-Drain Charge Q nC gd 6.2 10 Turn-On Delay Time t ns D(on) 22.6 Turn-On Rise Time ns tr V = -4V, V = -4.5V, DD GS 30.1 48 Turn-Off Delay Time ns I = -2A, R = 10, t DS G D(off) Turn-Off Fall Time 22.7 ns t f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 2 6. Device mounted on FR4 material with 1-inch (6.45cm ), 2oz (0.071mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMP1011UCB9 July 2015 Diodes Incorporated www.diodes.com Document number: DS37852 Rev. 2 - 2 NEW PRODUCT AADDVVAANNCCEED I INNFFOORRMMAATTIIOONN