DMN65D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Dual N-Channel MOSFET
I
D
V R Package
(BR)DSS DS(ON)
T = +25C
A Low On-Resistance
8 @ V = 5V 170mA
GS
Low Gate Threshold Voltage
60V SOT363
6 @ V = 10V 200mA
GS
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Description
ESD Protected Gate, 1KV (HBM)
This new generation MOSFET is designed to minimize the on-state
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
resistance (R ) and yet maintain superior switching
DS(ON)
Halogen and Antimony Free. Green Device (Note 3)
performance, making it ideal for high efficiency power management
Qualified to AEC-Q101 Standards for High Reliability
applications.
Mechanical Data
Applications
Case: SOT363
DC-DC Converters
Case Material: Molded Plastic; UL Flammability Classification
Power Management Functions
Rating 94V-0
Battery Operated Systems and Solid-State Relays
Moisture Sensitivity: Level 1 per J-STD-020
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Terminals: Solderable per MIL-STD-202, Method 208
e3
Memories, Transistors, etc.
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D G S
2 1 1
SOT363
S G D
2 2 1
ESD PROTECTED TO 1kV
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN65D8LDW-7 SOT363 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN65D8LDW
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady
T = +25C 180
A
mA
Continuous Drain Current (Note 5) V = 10V I
GS D
State
140
T = +70C
A
Steady
T = +25C 150
A
Continuous Drain Current (Note 5) V = 5V I mA
GS D
State
120
T = +70C
A
Steady
T = +25C 200
A
mA
Continuous Drain Current (Note 6) V = 10V I
GS D
State
160
T = +70C
A
Steady
T = +25C 170
A
Continuous Drain Current (Note 6) V = 5V I mA
GS D
State
140
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle = 1%) 800 mA
I
DM
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 300 mW
D
Thermal Resistance, Junction to Ambient (Note 5) R 435 C/W
JA
Total Power Dissipation (Note 6) 400 mW
P
D
Thermal Resistance, Junction to Ambient (Note 6) 330 C/W
R
JA
Thermal Resistance, Junction to Case (Note 6) 139 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C 1.0
J
I A V = 60V, V = 0V
DSS DS GS
T = +125C (Note 8) 5.0
J
Gate-Body Leakage I 5.0 A V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250A
GS(th) DS GS D
8 V = 5.0V, I = 0.115A
GS D
Static Drain-Source On-Resistance
R
DS (ON)
6
V = 10.0V, I = 0.115A
GS D
Forward Transconductance g 80 mS V = 10V, I = 0.115A
FS DS D
Diode Forward Voltage 0.8 1.2 V
V V = 0V, I = 115mA
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 22.0
Ciss
Output Capacitance C 3.2 pF V = 25V, V = 0V, f = 1.0MHz
oss DS GS
Reverse Transfer Capacitance C 2.0
rss
Gate Resistance R 79.9 V = 0V, V = 0V, f = 1.0MHz
G DS GS
0.87
Total Gate Charge V = 10V Q
GS g
0.43
Total Gate Charge V = 4.5V Q V = 10V, V = 30V,
GS g GS DS
nC
Gate-Source Charge 0.11 I = 150mA
Q D
gs
Gate-Drain Charge Q 0.11
gd
Turn-On Delay Time t 3.3
D(on)
Turn-On Rise Time t 3.2
r V = 30V, I = 0.115A, V = 10V
DD D GEN ,
nS
R = 25
Turn-Off Delay Time t 12.0 GEN
D(off)
Turn-Off Fall Time 6.3
t
f
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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DMN65D8LDW February 2015
Diodes Incorporated
www.diodes.com
Document number: DS35500 Rev. 8 - 2
NEW PRODUCT