DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D 0.6mm profile ideal for low profile applications V R (BR)DSS DS(ON) 2 T = +25C A PCB footprint of 4mm 4 V = 10V 0.55A GS Low Gate Threshold Voltage 300V 4 V = 4.5V 0.55A GS Low Input Capacitance 6 V = 2.7V 0.44A GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management applications. Case: U-DFN2020-6 Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminals: Finish NiPdAu over Copper leadframe. Solderable Battery Operated Systems and Solid-State Relays per MIL-STD-202, Method 208 e4 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.0065 grams (approximate) Memories, Transistors, etc D U-DFN2020-6 G Pin Out S Bottom View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Compliance Case Quantity per reel DMN30H4D0LFDE-7 Standard U-DFN2020-6 3,000 DMN30H4D0LFDE-13 Standard U-DFN2020-6 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN30H4D0LFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 300 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 0.55 A Continuous Drain Current (Note 6) V = 10V I A GS D State 0.43 T = +70C A 2 A Pulsed Drain Current (10 s pulse, duty cycle 1%) I DM Maximum Body Diode Continuous Current (Note 6) 2 A I S Thermal Characteristics Characteristic Symbol Value Units (Note 5) 0.63 Total Power Dissipation W P D (Note 6) 1.98 (Note 5) 189 Thermal Resistance, Junction to Ambient R JA (Note 6) 61 C/W (Note 6) Thermal Resistance, Junction to Case 9.3 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 300 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 240V, V = 0V DSS DS GS Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 1.7 2.8 V V V = V , I = 250A GS(th) DS GS D 2.3 4 V = 10V, I = 0.3A GS D Static Drain-Source On-Resistance R 2.3 4 V = 4.5V, I = 0.2A DS(ON) GS D 2.4 6 V = 2.7V, I = 0.1A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 0.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 187.3 Input Capacitance C iss V = 25V, V = 0V, DS GS 11.7 Output Capacitance C pF oss f = 1MHz 8.7 Reverse Transfer Capacitance C rss Total Gate Charge 7.6 Q g V = 192V, V = 10V, DS GS Gate-Source Charge 0.5 nC Q gs I = 0.5A D Gate-Drain Charge 3.3 Q gd Turn-On Delay Time 4.9 t D(on) 4.7 Turn-On Rise Time t r V = 60V, R =200 DS L nS 25.8 V = 10V, R = 25 Turn-Off Delay Time t GS G D(off) 17.5 Turn-Off Fall Time t f Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing 2 of 6 May 2014 DMN30H4D0LFDE Diodes Incorporated www.diodes.com Document number: DS36380 Rev. 4 - 2 NEW PRODUCT