DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary Low On-Resistance I D MAX Low Input Capacitance BV R DSS DS(ON) MAX T = +25C A Fast Switching Speed 35m V = 10V 5.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 45m V = 4.5V GS 4.9A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case: V-DFN3020-8 (Type N) DS(ON) ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC Motor Control Terminals: Finish NiPdAu Annealed over Copper Leadframe. DC-AC Inverters e4 Solderable per MIL-STD-202, Method 208 Weight: 0.011 grams (Approximate) V-DFN3020-8 (Type N) D 1 D 2 Pin 1 8 S1 1 D1 G1 7 2 G1 G2 S2 6 3 D2 G2 5 4 S1 S2 Bottom View Bottom View Q1 N-Channel MOSFET Q2 N-Channel MOSFET Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3035LWN-7 V-DFN3020-8 (Type N) 3,000/Tape & Reel DMN3035LWN-13 V-DFN3020-8 (Type N) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3035LWN Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 5.5 A Continuous Drain Current (Note 6) V = 10V I A GS D State 4.4 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1 A I S Pulsed Drain Current 30 A I DM Avalanche Current (Note 7) L = 0.1mH A I AS Avalanche Energy (Note 7) L = 0.1mH E mJ AS Thermal Characteristics Characteristic Symbol Value Units 0.77 T = +25C A Total Power Dissipation (Note 5) P W D 0.49 T = +70C A Steady State 162 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 116 1.78 T = +25C A Total Power Dissipation (Note 6) P W D 1.10 T = +70C A Steady State 71 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 50 Thermal Resistance, Junction to Case (Note 6) R 10.7 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 2.0 V V = V , I = 250A GS(TH) DS GS D V = 10V, I = 4.8A 26 35 GS D Static Drain-Source On-Resistance m R DS(ON) 34 45 V = 4.5V, I = 4.3A GS D Diode Forward Voltage 0.75 1.1 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 399 Input Capacitance pF C iss V = 15V, V = 0V, DS GS Output Capacitance 57 pF C oss f = 1.0MHz Reverse Transfer Capacitance 50 pF C rss Gate Resistance 1.36 R V = 0V, V = 0V, f = 1MHz g DS GS 4.5 Total Gate Charge (V = 4.5V) Q nC GS g 9.9 Total Gate Charge (V = 10V) Q nC GS g V = 15V, I = 5.8A DS D 1.2 Gate-Source Charge Q nC gs 1.8 Gate-Drain Charge Q nC gd 3.0 Turn-On Delay Time t ns D(ON) 3.3 Turn-On Rise Time ns t V = 15V, V = 10V, R DD GS Turn-Off Delay Time 10.6 ns R = 2.6, R = 3 t L G D(OFF) Turn-Off Fall Time 2.0 ns t F Reverse Recovery Time 7.9 ns t I = 4.8A, di/dt = 100A/s RR F Reverse Recovery Charge 2.4 nC Q I = 4.8A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3035LWN October 2016 Diodes Incorporated www.diodes.com Document number: DS37528 Rev. 3 - 2