DMN26D0UT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-523 3.0 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 4.0 2.5V Moisture Sensitivity: Level 1 per J-STD-020 6.0 1.8V Terminal Connections: See Diagram 10 1.5V Terminals: Finish Matte Tin annealed over Alloy 42 leadframe. Very Low Gate Threshold Voltage, 1.0V max Solderable per MIL-STD-202, Method 208 Low Input Capacitance Marking Information: See Page 4 Fast Switching Speed Ordering Information: See Page 4 Low Input/Output Leakage Weight: 0.002 grams (approximate) Ultra-Small Surface Mount Package ESD Protected Gate Lead, Halogen, and Antimony Free By Design/RoHS Compliant (Note 2) Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Drain D Gate G S Gate Protection Source Diode ESD PROTECTED TOP VIEW EQUIVALENT CIRCUIT TOP VIEW Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain Source Voltage 20 V V DSS Gate-Source Voltage V V 10 GSS Drain Current (Note 1) 230 mA I D Pulsed Drain Current T = 10s I 805 mA P DM Thermal Characteristics T = 25C unless otherwise specified A Total Power Dissipation (Note 1) P 300 mW D Thermal Resistance, Junction to Ambient (Note 1) 417 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at DMN26D0UT Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 100A DSS GS D 500 nA Zero Gate Voltage Drain Current T = 25C I V = 20V, V = 0V C DSS DS GS 1 V = 10V, V = 0V A GS DS Gate-Body Leakage I 500 nA V = 8V, V = 0V GSS GS DS 100 nA V = 5V, V = 0V GS DS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage 0.5 1.0 V V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 100mA GS D 1.8 3.0 V = 2.5V, I = 50mA 2.4 4.0 GS D Static Drain-Source On-Resistance 2.9 6.0 R V = 1.8V, I = 20mA DS (ON) GS D 3.7 10.0 V = 1.5V, I = 10mA GS D 5.4 15.0 V = 1.2V, I = 1mA GS D Forward Transconductance 242 mS Y V =10V, I = 0.1A fs DS D Source-Drain Diode Forward Voltage V 0.5 1.0 V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS Input Capacitance C 14.1 pF iss V = 15V, V = 0V DS GS Output Capacitance 2.9 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 1.6 pF rss SWITCHING CHARACTERISTICS, V = 4.5V (Note 5) GS Turn-On Delay Time 3.8 t d(on) Rise Time t 7.9 V = 4.5V, V = 10V r GS DD ns Turn-Off Delay Time t 13.4 I = 200mA, R = 2.0 d(off) D G Fall Time t 15.2 f Notes: 4. Short duration pulse test used to minimize self-heating effect. 5. Switching characteristics are independent of operating junction temperature. 0.8 0.4 V = 10V DS 0.7 V = 8V V = 4.5V GS GS T = -55C 0.6 0.3 A T = 25C V = 3.0V A GS T = 85C A 0.5 T = 125C A 0.2 0.4 V = 2.5V T = 150C GS A 0.3 V = 2.0V GS 0.1 0.2 0.1 V = 1.5V GS 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 V , GATE-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) GS DS Fig. 2 Typical Transfer Characteristic Fig. 1 Typical Output Characteristic 2 of 6 September 2009 DMN26D0UT Diodes Incorporated www.diodes.com Document number: DS31854 Rev. 2 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D