NA NA NA DMN2600UFB 25V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: X1-DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound Fast Switching Speed UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish NiPdAu over Copper Leadframe Solderable Halogen and Antimony Free. Green Device (Note 3) per MIL-STD-202, Method 208 e4 ESD Protected Gate 1kV Weight: 0.001 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability Drain X1-DFN1006-3 Body Diode S Gate D G Gate Protection Source Diode Bottom View Top View ESD PROTECTED TO 1kV Equivalent Circuit Internal Schematic Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DMN2600UFB-7 NA 7 8 3000 DMN2600UFB-7B NA 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2600UFB Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 25 V V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 1.3 A Continuous Drain Current (Note 4) I A D State 0.9 T = +85C A Pulsed Drain Current 3.0 A I DM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 4) 0.54 W PD 234 C/W Thermal Resistance, Junction to Ambient T = +25C R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 25 - - V V = 0V, I = 250A DSS GS D - - 1 A Zero Gate Voltage Drain Current T = +25C I V = 25V, V = 0V J DSS DS GS Gate-Source Leakage - - 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage 0.45 - 1.0 V V V = V , I = 250A GS(th) DS GS D 350 V = 4.5V, I = 200mA GS D Static Drain-Source On-Resistance - - 450 m R V = 2.5V, I = 100mA DS (ON) GS D 600 V = 1.8V, I = 75mA GS D Forward Transfer Admittance Y 40 - - mS V = 3V, I = 200mA fs DS D Diode Forward Voltage V - - 1.2 V V = 0V, I = 300mA SD GS S DYNAMIC CHARACTERISTICS (Note 6) - 70.13 - Input Capacitance C pF iss V = 15V, V = 0V, DS GS - 7.56 - Output Capacitance C pF oss f = 1.0MHz - 5.59 - Reverse Transfer Capacitance C pF rss - 72.3 - Gate Resistance Rg VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge - 0.85 - nC Q g V = 4.5V, V = 15V, GS DS Gate-Source Charge - 0.16 - nC Q gs I = 1A D Gate-Drain Charge - 0.11 - nC Q gd Turn-On Delay Time - 4.1 - ns t D(on) Turn-On Rise Time - 11.5 - ns t V = 15V, R =15 r DS L - 34.8 - Turn-Off Delay Time t ns V = 10V, R = 6 D(off) GS G - 20.9 - Turn-Off Fall Time t ns f Notes: 4. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2600UFB May 2015 Diodes Incorporated www.diodes.com Document number: DS31983 Rev. 5 - 2 NEW PRODUCT