DMN2400UFB-7 Diodes Incorporated

DMN2400UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) T = +25C A Low Gate Threshold Voltage Low Input Capacitance 0.75A 0.55 V = 4.5V GS Fast Switching Speed 20V 0.63A 0.75 V = 2.5V GS Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected up to 1.5kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data Case: X1-DFN1006-3 This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound ideal for high-efficiency power-management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Battery Charging Terminal Connections Indicator: Collector Dot Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe Solderable DC-DC Converters per MIL-STD-202, Method 208 e4 Portable Power Adaptors Weight: 0.001 grams (Approximate) Drain X1-DFN1006-3 S Gate D G Gate Protection Source ESD PROTECTED TO 1.5kV Diode Top View Bottom View Package Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2400UFB-7 X1-DFN1006-3 3,000/Tape & Reel DMN2400UFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NB NB NB DMN2400UFB Marking Information From date code 1527 (YYWW), NB NB this changes to: Top View Top View Bar Denotes Gate and Source Side Dot Denotes Drain Side DMN2400UFB-7 NB Top View NB = Part Marking Code Bar Denotes Gate and Source Side DMN2400UFB-7B 2 of 7 DMN2400UFB May 2015 Diodes Incorporated www.diodes.com Document number: DS31963 Rev. 6 - 2 NB NB NB NB NB NB