DMG6898LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I max Low On-Resistance D V R max (BR)DSS DS(on) T = +25C A Low Input Capacitance 16m V = 10V 9.8A GS Fast Switching Speed 30V 23m V = 4.5V 8.7A Low Input/Output Leakage GS ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance Qualified to AEC-Q101 Standards for High Reliability (R ) and yet maintain superior switching performance, making it DS(on) PPAP Capable (Note 4) ideal for high efficiency power management applications. Mechanical Data Applications Case: SO-8 Backlighting Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.072 grams (Approximate) D1 G1 D1 S1 G2 D2 D2 S2 Top View ESD PROTECTED TO 2kV Internal Schematic Top View Ordering Information (Notes 4 & 5) Part Number Qualification Case Packaging DMG6898LSD-13 Commercial SO-8 2,500 / Tape & Reel DMG6898LSDQ-13 Automotive SO-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG6898LSD Maximum Ratings T = +25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 9.5 A Continuous Drain Current (Note 6) I A D State 7.1 T = +85C A Pulsed Drain Current (Note 7) 30 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) P 1.28 W D 99.3 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 6) RJA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics T = +25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 - - V BVDSS VGS = 0V, ID = 250A - - 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage - - 10 A I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.0 1.5 V V V = V , I = 250A GS(th) DS GS D 11 16 V = 4.5V, I = 9.4A GS D Static Drain-Source On-Resistance R - m DS (ON) 17 23 V = 2.5V, I = 8.3A GS D Forward Transfer Admittance - 17 - S Y V = 5V, I = 9.4A fs DS D Diode Forward Voltage V - 0.7 1.2 V V = 0V, I = 1.3A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 1149 Input Capacitance C - - pF iss V = 10V, V = 0V, DS GS 157 Output Capacitance C - - pF oss f = 1.0MHz 142 Reverse Transfer Capacitance C - - pF rss 1.51 Gate Resistance R - - V = 0V, V = 0V, f = 1MHz g DS GS 11.6 - - nC Total Gate Charge (VGS = 4.5V) Qg - 26 - nC Total Gate Charge (V = 10V) Q V = 4.5V, V = 10V, GS g GS DS Gate-Source Charge - 2.7 - nC I = 9.4A Q D gs Gate-Drain Charge - 3.4 - nC Q gd Turn-On Delay Time - 11.67 - ns t D(on) 12.49 Turn-On Rise Time t - - ns V = 10V, V = 4.5V, r DD GS 35.89 Turn-Off Delay Time t - - ns R = 6, I = 1A D(off) GEN D 12.33 Turn-Off Fall Time t - - ns f Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 DMG6898LSD November 2014 Diodes Incorporated www.diodes.com Document number: DS31947 Rev. 6 - 2 NEW PRODUCT