DMC6040SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Device V R (BR)DSS DS(on) max Low On-Resistance T = +25C A 40m V = 10V 6.5 A Fast Switching Speed Q1 GS 60V N-Channel 55m V = 4.5V 5.6 A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -3.9 A Q2 110m V = -10V GS Halogen and Antimony Free. Green Device (Note 3) -60V P-Channel -3.6 A 130m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: SO-8 state resistance (R ) and yet maintain superior switching DS(ON) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections: See Diagram Power Management Functions Terminals: Finish Tin Finish annealed over Copper leadframe. Backlighting Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) SO-8 D2 D1 S1 D1 Pin1 G1 D1 G2 G1 S2 D2 G2 D2 S2 S1 Top View Top View Pin Configuration Q1 N-Channel MOSFET Q2 P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC6040SSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC6040SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Q2 Units Drain-Source Voltage V 60 -60 V DSS Gate-Source Voltage V 20 20 V GSS Steady T = +25C 5.1 -3.1 A I A D State 4.1 -2.5 T = +70C A Continuous Drain Current (Note 6) V = -10V GS T = +25C 6.5 -3.9 A t<10s A I D 5.2 -3.1 T = +70C A Maximum Body Diode Forward Current (Note 6) I 2.1 -2.1 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 28 -19 A DM Avalanche Current (Note 7) L = 0.1mH I 17.2 -17.6 A AS Avalanche Energy (Note 7) L = 0.1mH E 14.7 15.4 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.24 T = +25C A Total Power Dissipation (Note 5) P W D T = +70C 0.8 A Steady state 101 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 61 T = +25C 1.56 A Total Power Dissipation (Note 6) W P D T = +70C 1.0 A Steady state 80 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 49 C/W Thermal Resistance, Junction to Case (Note 6) 14.7 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics N-Channel Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(th) DS GS D 33 40 V = 10V, I = 8A GS D Static Drain-Source On-Resistance R m DS (ON) 37 55 V = 4.5V, I = 5A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1130 iss Output Capacitance C 69 pF V = 15V, V = 0V f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 42 rss Gate Resistance R 1.7 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 10V) Q 20.8 GS g Total Gate Charge (V = 4.5V) Q 9.4 GS g nC V = 30V, I = 4.3A DS D Gate-Source Charge Q 3.3 gs Gate-Drain Charge 3.0 Q gd Turn-On Delay Time 3.6 t D(on) Turn-On Rise Time 1.8 t V = 10V, V = 30V, R = 6, r GS DD G nS Turn-Off Delay Time 20.1 t I = 4.3A D(off) D Turn-Off Fall Time t 4.3 f Body Diode Reverse Recovery Time t 14.2 nS I = 4.3A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge Q 7.5 nC I = 4.3A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting T = +25C. A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 9 June 2014 DMC6040SSD Diodes Incorporated www.diodes.com Document number: DS36829 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT