DMC4015SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Device V R (BR)DSS DS(ON) Low On-Resistance T = +25C A Fast Switching Speed 12.2A 15m V = 10V GS Q1 40V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m V = 4.5V 10.6A GS Halogen and Antimony Free. Green Device (Note 3) -8.8A 29m V = -10V GS Q2 -40V -7.1A 45m V = -4.5V GS Mechanical Data Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. Description UL Flammability Classification Rating 94V-0 This new generation MOSFET is designed to minimize the on-state Moisture Sensitivity: Level 1 per J-STD-020 resistance (R ) and yet maintain superior switching performance, DS(ON) Terminal Connections: See Diagram making it ideal for high efficiency power management applications. Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Applications Weight: 0.074 grams (Approximate) DC-DC Converters Power Management Functions Backlighting SO-8 D1 D2 S1 D1 Pin1 G1 D1 G2 G1 S2 D2 G2 D2 S2 S1 Top View Top View Pin Configuration Q N-Channel MOSFET Q2 P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC4015SSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC4015SSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q1 Value Q2 Units Drain-Source Voltage V 40 -40 V DSS Gate-Source Voltage 20 20 V V GSS Steady T = +25C 8.6 -6.2 A I A D State 6.8 -4.9 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 12.2 -8.8 A t<10s A I D 9.8 -7.1 T = +70C A Maximum Body Diode Forward Current (Note 6) 2.5 -2.2 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 80 -50 A I DM Avalanche Current (Note 7) L = 0.1mH 27 -25 A I AS Avalanche Energy (Note 7) L = 0.1mH 37 32 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.2 A Total Power Dissipation (Note 5) P W D T = +70C 0.9 A Steady State 106 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 45 T = +25C 1.7 A Total Power Dissipation (Note 6) P W D T = +70C 1.1 A Steady State 76 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 6) 12 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics N-Channel Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 40V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(th) DS GS D 15 V = 10V, I = 3A GS D Static Drain-Source On-Resistance m R DS(ON) 20 V = 4.5V, I = 3A GS D Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss 1810 V = 20V, V = 0V, DS GS Output Capacitance C pF oss 135 f = 1.0MHz Reverse Transfer Capacitance C rss 112 1.7 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 19 Total Gate Charge (V = 4.5V) Q GS g 40 Total Gate Charge (V = 10V) GS Q g nC V = 20V, I = 3A DS D Gate-Source Charge 5.5 Q gs Gate-Drain Charge 6.3 Q gd Turn-On Delay Time 5.1 t D(on) Turn-On Rise Time 5.7 t V = 20V, I = 3A r DD D nS 23 Turn-Off Delay Time t V = 10V, R = 3, D(off) GS G 6.3 Turn-Off Fall Time t f 12.2 Body Diode Reverse Recovery Time t nS I = 3A, dI/dt = 100A/s rr S 5.4 Body Diode Reverse Recovery Charge Q nC I = 3A, dI/dt = 100A/s rr S 2 of 9 DMC4015SSD November 2014 Diodes Incorporated www.diodes.com Document number: DS37348 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT