EMITTER 2DB1713 LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Epitaxial Planar Die Construction Case: SOT89-3L Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Switching or Amplification Applications Moisture Sensitivity: Level 1 per J-STD-020D Complementary NPN Type Available (2DD2678) Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) 2,4 1 3 Top View Device Schematic Pin Out Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -15 V V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -6 A CM Continuous Collector Current I -3 A C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) T = 25C P 0.9 W A D 139 C/W Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R A JA Power Dissipation (Note 4) T = 25C P 2 W A D Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C 62.5 C/W A R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage V -15 V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage (Note 5) V -12 V I = -1mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -6 V I = -10A, I = 0 (BR)EBO E C Collector Cut-Off Current I -0.1 A V = -15V, I = 0 CBO CB E Emitter Cut-Off Current -0.1 I A V = -6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage -120 -250 mV V I = -1.5A, I = -30mA CE(SAT) C B DC Current Gain 270 680 h V = -2V, I = -500mA FE CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = 0, CB E Output Capacitance C 40 pF obo f = 1MHz V = -2V, I = -100mA, CE C Current Gain-Bandwidth Product 180 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 2DB1713 2.0 3.0 2.5 1.6 I = -5mA B 2.0 I = -4mA B 1.2 Note 4 1.5 I = -3mA B 0.8 I = -2mA 1.0 B Note 3 0.4 I = -1mA 0.5 B 0 0 01 2 34 5 0 25 50 75 100 125 150 -V , COLLECTOR-EMITTER VOLTAGE (V) T , AMBIENT TEMPERATURE (C) CE A Fig. 2 Typical Collector Current Fig. 1 Power Dissipation vs. Ambient Temperature vs. Collector-Emitter Voltage 10,000 1 V = -2V CE I/I = 20 CB T = 150C A T = 150C T = 85C A A 0.1 1,000 T = 85C A T = 25C A T = 25C A T = -55C A T = -55C A 100 0.01 0.001 10 1 10 100 1,000 10,000 1 10 100 1,000 10,000 -I , COLLECTOR CURRENT (mA) -I , COLLECTOR CURRENT (mA) C C Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 1.2 I =/I 20 V = -2V CB CE 1.0 1.0 0.8 0.8 T = -55C A T = -55C A 0.6 0.6 T = 25C A T = 25C A T = 85C A 0.4 0.4 T = 85C A T = 150C A 0.2 T = 150C 0.2 A 0 0 1 10 100 1,000 10,000 1 10 100 1,000 10,000 -I , COLLECTOR CURRENT (mA) -I , COLLECTOR CURRENT (mA) C C Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current vs. Collector Current 2 of 4 December 2008 2DB1713 Diodes Incorporated www.diodes.com Document number: DS31634 Rev. 2 - 2 NEW PRODUCT -V , BASE-EMITTER TURN-ON VOLTAGE (V) h, DC CURRENT GAIN P , POWER DISSIPATION (W) BE(ON) FE D -V , COLLECTOR-EMITTER CE(SAT) -V , BASE-EMITTER SATURATION VOLTAGE (V) BE(SAT) -I , COLLECTOR CURRENT (A) SATURATION VOLTAGE (V) C