The MTC6601N6 with MOSFET N & P Trench 30V 3.7A,2.7A 1.5V @ 250uA,1.2V @ 250uA 55 mΩ @ 3.4A,10V;110 mΩ @ 2.3A,10V SOT-26 RoHS is an electronically-controlled device manufactured by CYSTECH. It is used for low-side switching applications such as motor-drivers, DC-DC converters, and other power electronics systems. The device is a silicon based power metal-oxide-semiconductor field-effect transistor (MOSFET) with an N and P trench structure. It has a drain-source breakdown voltage (BVDSS) of 30V, a drain-source current rating (ID) of 3.7A and 2.7A, a gate threshold voltage of 1.5V @ 250uA and 1.2V @ 250uA, drain-source on-resistance ratings of 55 mO @ 3.4 A and 10 V and 110 mO @ 2.3 A and 10 V, and is packaged in a RoHS compliant SOT-26 package.